Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1634
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC4007
·Low
collector saturation voltage
APPLICATIONS
·For
medium speed,electrical supply
and DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-5
-4
40
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1634
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA ,I
B
=0
B
-80
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-0.1mA ,I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
V
BE sat
Base-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-80V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
μA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-4V
60
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
80
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-12V
12
MHz
h
FE
Classifications
D
60-120
E
100-200
F
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1634
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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