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EDI88128CS35TC

Description
Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
Categorystorage    storage   
File Size481KB,9 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Download Datasheet Parametric View All

EDI88128CS35TC Overview

Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88128CS35TC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWhite Electronic Designs Corporation
package instruction0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Codeunknown
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
length40.64 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height3.937 mm
Maximum standby current0.01 A
Minimum standby current4.5 V
Maximum slew rate0.2 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
White Electronic Designs
128Kx8 Monolithic SRAM, SMD 5962-89598
FEATURES
Access Times of 15*, 17, 20, 25, 35, 45, 55ns
CS# and OE# Functions for Bus Control
2V Data Retention (EDI88128LPS)
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Organized as 128Kx8
Commercial, Industrial and Military Temperature
Ranges
Thru-hole and Surface Mount Packages JEDEC
Pinout
• 32 pin Ceramic DIP, 400 mil (Package 102)
• 32 pin Ceramic DIP, 600 mil (Package 9)
• 32 lead Ceramic ZIP (Package 100)
• 32 lead Ceramic SOJ (Package 140)
EDI88128CS
• 32 pad Ceramic LCC (Package 141)
• 32 lead Ceramic Flatpack (Package 142)
Single +5V (±10%) Supply OperationThe
EDI88128CS is a high speed, high performance,
128Kx8 megabit density Monolithic CMOS Static
RAM.
The device has eight bi-directional input-output lines to
provide simultaneous access to all bits in a word. An
automatic power down feature permits the on-chip circuitry
to enter a very low standby mode and be brought back into
operation at a speed equal to the address access time.
A Low Power version with 2V Data Retention (EDI88128LPS)
is also available for battery back-up opperation. Military
product is available compliant to MIL-PRF-38535.
* 15ns access time is advanced information, contact factory for availability.
This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION
32
32
32
32
DIP
SOJ
LCC
FLATPACK
PIN DESCRIPTION
I/O0-7
A0-16
WE#
CS#
OE#
VCC
VSS
NC
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power (+5V ±10%)
Ground
Not Connected
32 ZIP
TOP VIEW
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 V
CC
31 A15
30 NC
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
TOP VIEW
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
2 V
CC
4
A15
6
NC
8
WE#
10 A13
12 A8
14 A9
16 A11
18 OE#
20 A10
22 CS#
24 I/O7
26 I/O6
28 I/O5
30 I/O4
32 I/O3
BLOCK DIAGRAM
Memory Array
A
0-16
Address
Buffer
Address
Decoder
I/O
Circuits
I/O
0-7
WE#
CS#
OE#
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February 2000
Rev. 10
1
White Electronic Designs Corporation • (602) 437-1520 •www.whiteedc.com
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