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BAS40TW

Description
0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS40TW Overview

0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE

BAS40TW /DW-04
/DW-05 /DW-06 /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
Mechanical Data
A
2
C
1
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
A
2
A
2
A
1
C
2
C
2
AC
1
C
1
C
2
C
3
AC
1
C
2
C
1
C
2
A
1
A
2
A
3
A
1
C
1
AC
2
A
1
A
1
C
2
C
1
C
1
A
2
A
1
A
2
AC
2
Top View
BAS40TW
BAS40DW-04
BAS40DW-05
BAS40DW-06
BAS40BRW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
Value
40
28
200
600
Unit
V
V
mA
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
40
Max
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10μA
I
F
= 1.0mA, t
p
< 300μs
I
F
= 40mA, t
p
< 300μs
V
R
= 30V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated

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