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BAV70W

Description
0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size74KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAV70W Overview

0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70W Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.1500 A
BAV70W
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
Mechanical Data
SOT-323
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe)
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
(Note 1)
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
I
R
C
T
t
rr
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BAV70W
Document number: DS30063 Rev. 9 - 2
1 of 3
www.diodes.com
April 2008
© Diodes Incorporated

BAV70W Related Products

BAV70W BAV70W_08
Description 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 2 2
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating NOT SPECIFIED MATTE Tin
Terminal location DUAL pair
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON silicon
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type SIGNAL DIODE Signal diode
Maximum reverse recovery time 0.0040 us 0.0040 us
Maximum repetitive peak reverse voltage 100 V 75 V
Maximum average forward current 0.1500 A 0.1500 A

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