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BAT750

Description
0.75 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size88KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAT750 Overview

0.75 A, SILICON, SIGNAL DIODE

BAT750
0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Please click here to visit our online spice models database.
Features
Very Low Forward Voltage Drop
High Conductance
For Use in DC-DC Converter, PCMCIA, and Mobile
Telecommunications Applications
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
TOP VIEW
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
Value
40
28
0.75
5.5
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
350
286
-55 to +125
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
40
Typ
45
225
235
290
340
390
420
475
50
175
25
Max
280
310
350
420
490
540
650
100
10
Unit
V
Test Condition
I
R
= 300uA
I
F
= 50mA
I
F
= 100mA
I
F
= 250mA
I
F
= 500mA
I
F
= 750mA
I
F
= 1000mA
I
F
= 1500mA
V
R
= 30V
V
R
= 0V, f = 1.0MHz
V
R
= 25V, f = 1.0MHz
I
F
= I
R
= 100mA,
I
rr
= 10mA. See figure 6.
Forward Voltage
V
F
mV
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
I
R
C
T
t
rr
μA
pF
pF
ns
Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BAT750
Document number: DS30216 Rev. 12 - 2
1 of 3
www.diodes.com
June 2008
© Diodes Incorporated

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