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BSS138W_2

Description
300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size92KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

BSS138W_2 Overview

300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

BSS138W_2 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage50 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.3500 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.3000 A
feedback capacitor5 pF
Maximum drain on-resistance3 ohm
BSS138W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)
Mechanical Data
SOT-323
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
Gate
TOP VIEW
Source
G
Equivalent Circuit
TOP VIEW
S
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
50
50
±20
200
Units
V
V
V
mA
Characteristic
Continuous
Continuous
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
1.
2.
3.
4.
5.
6.
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
0.5
100
Typ
75
1.2
1.4
Max
0.5
±100
1.5
3.5
50
25
8.0
20
20
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.22A
V
DS
= 25V, I
D
= 0.2A, f = 1.0KHz
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50Ω
R
GS
20KΩ.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138W
Document number: DS30206 Rev. 9 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated

BSS138W_2 Related Products

BSS138W_2 BSS138W
Description 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
Minimum breakdown voltage 50 V 50 V
Processing package description ROHS COMPLIANT PACKAGE-3 ROHS COMPLIANT PACKAGE-3
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum ambient power consumption 0.3500 W 0.3500 W
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 0.3000 A 0.3000 A
feedback capacitor 5 pF 5 pF
Maximum drain on-resistance 3 ohm 3 ohm
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