MMBT123S
1A NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
A
C
B
B
TOP VIEW
E
E
D
G
H
K
J
L
C
SOT-23
Dim
A
B
C
D
E
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
G
H
J
K
L
M
α
C
•
B
E
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θ
JA
T
J
, T
STG
Value
45
18
5
1
300
417
-55 to +150
Unit
V
V
V
A
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
C
obo
f
T
Min
45
18
5
⎯
⎯
150
⎯
⎯
100
Max
⎯
⎯
⎯
1
1
800
0.5
8
⎯
Unit
V
V
V
μA
μA
⎯
V
pF
MHz
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100mA, V
CE
= 1V
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CB
= 10V, I
E
= 50mA,
f = 100MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30292 Rev. 7 - 2
1 of 3
www.diodes.com
MMBT123S
© Diodes Incorporated
400
Note 1
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
h
FE
, DC CURRENT GAIN
1000
100
V
CE
= 1.0V
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
100
f = 1MHz
1
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain vs
Collector Current
1000
C
OBO
, OUTPUT CAPACITANCE (pF)
V
CE (SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
1
10
100
100
10
10
1
0.1
1
0.0001
0.001
0.01
0.1
1
10
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage
I
C
, COLLECTOR CURRENT (A)
Fig. 4, Collector Saturation Voltage vs
Collector Current
DS30292 Rev. 7 - 2
2 of 3
www.diodes.com
MMBT123S
© Diodes Incorporated
Ordering Information
(Note 5)
Device
MMBT123S-7-F
Notes:
Packaging
SOT-23
Shipping
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6D = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
2005
S
Apr
4
2006
T
May
5
Jun
6
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30292 Rev. 7 - 2
3 of 3
www.diodes.com
MMBT123S
© Diodes Incorporated
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