MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMDT5401)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
C
2
B
1
E
1
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
—
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
A
B
C
D
F
M
E
2
B
2
C
1
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: K4N, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
K
G
H
0.65 Nominal
H
J
K
L
M
α
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
(Note 1)
(Note 1, 2)
(Note 1)
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
180
160
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30172 Rev. 8 - 2
1 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
⎯
50
100
⎯
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
V
CE
= 10V, I
C
= 10mA, f = 100MHz
V
CE
= 5.0V, I
C
= 200μA,
R
S
= 1.0kΩ, f = 1.0kHz
h
FE
V
CE(SAT)
V
BE(SAT)
⎯
V
V
C
obo
h
fe
f
T
NF
6.0
250
300
8.0
pF
⎯
MHz
dB
6. Short duration pulse test used to minimize self-heating effect.
200
P
D
, POWER DISSIPATION (mW)
0.15
0.14
I
C
I
B
= 10
150
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
1
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
100
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
200
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
DS30172 Rev. 8 - 2
2 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
1,000
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
100
h
FE
, DC CURRENT GAIN
100
10
1
1
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
100
Ordering Information
Device
MMDT5551-7-F
Notes:
7.
(Note 7)
Packaging
SOT-363
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4N
YM
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
DS30172 Rev. 8 - 2
YM
K4N
2002
N
Apr
4
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
May
5
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
3 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30172 Rev. 8 - 2
4 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
