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SDM10K45_10

Description
0.01 A, 45 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

SDM10K45_10 Overview

0.01 A, 45 V, SILICON, SIGNAL DIODE

SDM10K45_10 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage45 V
Maximum average forward current0.0100 A
SDM10K45
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOD-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating).Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
Value
45
40
100
1.0
Unit
V
V
mA
A
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Forward Surge Current
@ t < 8.3ms
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range (Note 5)
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
500
-40 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Leakage Current (Note 2)
Total Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
Min
45
Typ
370
0.07
6.0
Max
450
1.0
Unit
mV
μA
pF
Test Condition
I
R
= 100μA
I
F
= 10mA
V
R
= 10V
V
R
= 10V, f = 1.0MHz
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
D
/dT
J
< 1/R
θJA
SDM10K45
Document number: DS30256 Rev. 15 - 2
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated

SDM10K45_10 Related Products

SDM10K45_10 SDM10K45
Description 0.01 A, 45 V, SILICON, SIGNAL DIODE 0.01 A, 45 V, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 1 1
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY
structure SINGLE SINGLE
Diode component materials SILICON SILICON
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type SIGNAL DIODE SIGNAL DIODE
Maximum repetitive peak reverse voltage 45 V 45 V
Maximum average forward current 0.0100 A 0.0100 A
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