BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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•
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•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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•
•
•
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•
•
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SOT-363
NEW PRODUCT
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.008 grams (approximate)
D
1
G
2
S
2
Q
1
Q
2
S
1
G
1
D
2
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings – Total Device
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Maximum Ratings N-CHANNEL – Q
1
, 2N7002 Section
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Symbol
V
DSS
V
DGR
V
GSS
I
D
@T
A
= 25°C unless otherwise specified
Value
60
60
±20
±40
115
73
800
Units
V
V
V
mA
Maximum Ratings P-CHANNEL – Q
2
, BSS84 Section
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
20KΩ
Gate-Source Voltage
Drain Current (Note 1)
Notes:
@T
A
= 25°C unless otherwise specified
Value
-50
-50
±20
-130
Units
V
V
V
mA
Continuous
Continuous
Symbol
V
DSS
V
DGR
V
GSS
I
D
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS8402DW
Document number: DS30380 Rev. 12 - 2
1 of 5
www.diodes.com
June 2008
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL – Q
1
, 2N7002 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
@ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
⎯
⎯
1.0
⎯
0.5
80
⎯
⎯
⎯
⎯
⎯
Typ
70
⎯
⎯
⎯
3.2
4.4
1.0
⎯
22
11
2.0
7.0
11
@T
A
= 25°C unless otherwise specified
Unit
V
µA
nA
V
Ω
A
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Max
⎯
1.0
500
±10
2.5
7.5
13.5
⎯
⎯
50
25
5.0
20
20
NEW PRODUCT
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Electrical Characteristics P-CHANNEL – Q
2
, BSS84 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
@ T
A
= 25°C unless otherwise specified
Unit
V
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= 25°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25°C
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
⎯
⎯
⎯
⎯
-0.8
⎯
.05
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
18
Max
⎯
-15
-60
-100
±10
-2.0
10
⎯
45
25
12
⎯
⎯
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
BSS8402DW
Document number: DS30380 Rev. 12 - 2
2 of 5
www.diodes.com
June 2008
© Diodes Incorporated
BSS8402DW
N-CHANNEL – 2N7002 SECTION
1.0
I
D
, DRAIN-SOURCE CURRENT (A)
7
T
j
= 25
°
C
0.8
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
6
5
4
3
2
1
0
NEW PRODUCT
0.6
0.4
0.2
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
5
0
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
0.2
1.0
3.0
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
6
2.5
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
5
4
2.0
3
2
1.5
V
GS
= 10V,
I
D
= 200mA
1
1.0
-55
-30
-5
20
45
70 95
120 145
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs. Junction Temperature
0
0
2
4
6
8
10 12 14 16 18
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
10
9
V
GS,
GATE-SOURCE CURRENT (V)
8
7
6
5
4
3
2
1
0
0
0.4
0.8
0.6
I
D
, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
0.2
1
V
DS
= 10V
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
50
75
100 125 150 175 200
25
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
0
BSS8402DW
Document number: DS30380 Rev. 12 - 2
3 of 5
www.diodes.com
June 2008
© Diodes Incorporated
BSS8402DW
P-CHANNEL – BSS84 SECTION
-600
T
A
= 25
°
C
-1.0
I
D
, DRAIN-SOURCE CURRENT (mA)
-500
I
D
, DRAIN CURRENT (A)
-0.8
NEW PRODUCT
-400
-0.6
-300
-0.4
-200
-100
-0.2
0
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE (V)
Fig. 7 Drain-Source Current vs. Drain-Source Voltage
10
9
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
-0.0
0
-1
0
-5
-1
-2
-3
-4
-6
-7
-8
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Fig. 8 Drain Current vs. Gate-Source Voltage
15
V
GS
= -10V
I
D
= -0.13A
7
6
5
4
3
2
T
A
= 125
°
C
R
DS
, ON-RESISTANCE (
Ω
)
T
A
= 25
°
C
8
12
9
6
3
1
0
0
-1
-2
-4
-5
-3
V
GS
, GATE TO SOURCE (V)
Fig. 9 On-Resistance vs. Gate-Source Voltage
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance vs. Junction Temperature
-25
25.0
20.0
R
DS
, ON-RESISTANCE (
Ω
)
V
GS
= -3.5V
V
GS
= -3V
15.0
V
GS
= -5V
10.0
V
GS
= -4V
V
GS
= -6V
5.0
V
GS
= -8V
V
GS
= -10V
0.0
-0.0
-0.4
-0.6
-0.8
I
D
, DRAIN CURRENT (A)
Fig. 11 On-Resistance vs. Drain Current
-0.2
1.0
BSS8402DW
Document number: DS30380 Rev. 12 - 2
4 of 5
www.diodes.com
June 2008
© Diodes Incorporated
BSS8402DW
Ordering Information
Part Number
BSS8402DW-7-F
Notes:
(Note 6)
Case
SOT-363
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)
KNP
Date Code Key
Year
Code
Month
Code
2003
P
Jan
1
2004
R
Feb
2
Mar
3
2005
S
Apr
4
YM
2006
T
2007
U
Jun
6
2008
V
Jul
7
2009
W
Aug
8
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
May
5
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
E
E
Z
G
C
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
BSS8402DW
Document number: DS30380 Rev. 12 - 2
5 of 5
www.diodes.com
June 2008
© Diodes Incorporated
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