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SRF1318

Description
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size19KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

SRF1318 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

SRF1318 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.7 A
Collector-emitter maximum voltage16 V
ConfigurationSingle
Minimum DC current gain (hFE)20
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SRF 1318
NPN RF POWER TRANSISTOR
DESCRIPTION
The
ASI
SRF 1318
is a Common
Emitter Device Designed for Class C
Amplifier Applications up to 1 GHz.
PACKAGE STYLE 280 4L STUDLESS
FEATURES INCLUDE:
High Gain
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
1.7 A
36 V
15 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
12 C/W
T
C
= 25
O
C
O
3 = Base
1 = Collector
2 & 4 = Emitter
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
h
FE
C
OB
*P
G
*η c
η
I
C
= 10 mA
I
C
= 50 mA
I
E
= 2.0 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
16
4.0
UNITS
V
V
V
---
V
CE
= 5.0 V
V
CB
= 12.5 V
I
C
= 200 mA
f = 1.0 MHz
20
19
pF
dB
%
* RF SPECIFICATIONS ARE CONTROLLED BY CUSTOMER DRAWING AND ARE PROPRIETARY.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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