DCX (xxxx) K
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 1)
“Green” Device (Note 2)
Part Number
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
R1
22KΩ
47KΩ
10KΩ
2.2KΩ
10KΩ
100KΩ
4.7KΩ
10KΩ
R2
22KΩ
47KΩ
47KΩ
47KΩ
10KΩ
100KΩ
-
-
C1
Mechanical Data
•
•
•
•
•
•
•
•
Case: SC-74R (Note 3)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Table and Page 11
Ordering Information: See Page 11
Weight: 0.015 grams (approximate)
Marking
C17
C20
C14
C06
C13
C15
C07
C12
B2
E2
C1
B2
E2
R
1
R
2
R
2
R
1
E1
B1
C2
E1
R
1
R
1
B1
C2
R1, R2 Device Schematic
R1 only Device Schematic
Maximum Ratings NPN Section
Characteristic
Supply Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
All
Value
50
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max
30
30
70
100
50
20
100
100
100
Unit
V
Input Voltage
V
IN
V
Output Current
I
O
mA
Output Current
I
C(MAX)
mA
Thermal Characteristics NPN Section
Characteristic
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device
datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be
exceeded.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
1 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
Maximum Ratings PNP Section
Characteristic
Supply Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
All
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
Value
50
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
+10 to –40
+5V max
+5V max
-30
-30
-70
-100
-50
-20
-100
-100
-100
Unit
V
Input Voltage
V
IN
V
Output Current
I
O
mA
Output Current
I
C(MAX)
mA
Thermal Characteristics PNP Section
Characteristic
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
(Note 4)
(Note 4)
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics NPN Section
Characteristic (DDC143TK & DDC114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
ΔR
1
f
T
Min
50
50
5
⎯
⎯
⎯
100
-30
⎯
Typ Max Unit
Test Condition
V I
C
= 50μA
⎯
⎯
V I
C
= 1mA
⎯
⎯
V I
E
= 50μA
⎯
−−
⎯
0.5
μA
V
CB
= 50V
⎯
0.5
μA
V
EB
= 4V
I /I = 2.5mA / 0.25mA – DCX143TK
V
C B
⎯
0.3
I
C
/I
B
= 1mA / 0.1mA – DCX114TK
250 600
⎯
I
C
= 1mA, V
CE
= 5V
⎯
+30 %
⎯
250
⎯
MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
Electrical Characteristics NPN Section (continued)
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Symbol
Min
0.5
0.5
0.3
0.5
0.5
0.5
@T
A
= 25°C unless otherwise specified
V
l(OFF)
Input Voltage
V
l(ON)
⎯
Output Voltage
V
O(ON)
⎯
Input Current
I
l
⎯
Output Current
I
O(OFF)
DC Current Gain
G
l
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
ΔR
1
R
2
/R
1
f
T
⎯
80
68
68
80
30
82
-30
-20
⎯
Typ Max Unit
Test Condition
1.1
1.1
⎯
V V
CC
= 5V, I
O
= 100μA
⎯
⎯
1.1
1.1
V
O
= 0.3V, I
O
= 5mA
1.65 3.0
3.0
V
O
= 0.3V, I
O
= 2mA
1.9
V
O
= 0.3V, I
O
= 1mA
⎯
1.4
V
⎯
1.1
V
O
= 0.3V, I
O
= 5mA
1.9 3.0
V
O
= 0.3V, I
O
= 10mA
1.9 3.0
V
O
= 0.3V, I
O
= 1mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 10mA / 0.5mA
I /I = 5mA / 0.25mA
0.1 0.3
V
O l
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
0.36
0.18
0.88
mA V
I
= 5V
⎯
3.6
0.88
0.15
⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
⎯
⎯
⎯
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
⎯
+30 %
⎯
+20
%
⎯
⎯
250
⎯
MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics PNP Section
Characteristic (DCX143TK & DCX114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Symbol Min
BV
CBO
-50
BV
CEO
-50
-5
BV
EBO
I
CBO
⎯
I
EBO
⎯
V
CE(SAT)
h
FE
ΔR
1
f
T
⎯
100
-30
⎯
Typ Max Unit
Test Condition
V I
C
= -50μA
⎯
⎯
V I
C
= -1mA
⎯
⎯
V I
E
= -50μA
⎯
⎯
⎯
-0.5
μA
V
CB
= -50V
⎯
-0.5
μA
V
EB
= -4V
I /I = -2.5mA / -0.25mA - DCX143TK
V
C B
⎯
-0.3
I
C
/I
B
= -1mA / -0.1mA - DCX114TK
250 600
⎯
I
C
= -1mA, V
CE
= -5V
⎯
+30 %
⎯
250
⎯
MHz V
CE
= -10V, I
E
= 5mA, f = 100MHz
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
3 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
Electrical Characteristics PNP Section (Continued)
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
@T
A
= 25°C unless otherwise specified
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
*Transistor - For Reference Only
Symbol Min Typ Max Unit
Test Condition
-1.1
-0.5
-0.5 -1.1
-0.3
⎯
V V
CC
= -5V, I
O
= -100μA
⎯
V
l(OFF)
-0.5
⎯
-0.5
−1.1
-0.5
−1.1
V
O
= -0.3V, I
O
= -5mA
-1.9 -3.0
V
O
= -0.3V, I
O
= -2mA
-1.9 -3.0
V
O
= -0.3V, I
O
= -1mA
⎯
-1.4
V
V
l(ON)
⎯
⎯
-1.1
V
O
= -0.3V, I
O
= -5mA
-1.9 -3.0
V
O
= -0.3V, I
O
= -10mA
-1.9 -3.0
V
O
= -0.3V, I
O
= -1mA
I
O
/I
l
= -10mA /-0.5mA
I
O
/I
l
= -10mA /-0.5mA
I /I = -5mA /-0.25mA
V
O l
V
O(ON)
⎯
-0.1 -0.3
I
O
/I
l
= -5mA /-0.25mA
I
O
/I
l
= -10mA/-0.5mA
I
O
/I
l
= -5mA/-0.25mA
-0.36
-0.18
-0.88
mA V
I
= -5V
⎯
⎯
I
l
-3.6
-0.88
-0.15
I
O(OFF)
⎯
⎯
-0.5
μA
V
CC
= 50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
80
V
O
= -5V, I
O
= -5mA
68
V
O
= -5V, I
O
= -10mA
68
G
l
⎯
⎯
⎯
80
V
O
= -5V, I
O
= -10mA
30
V
O
= -5V, I
O
= -5mA
82
V
O
= -5V, I
O
= -5mA
-30
ΔR
1
⎯
+30 %
⎯
-20
R
2
/R
1
⎯
+20
%
⎯
f
T
⎯
250
⎯
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Typical Curves – Total Device
P
D
, POWER DISSIPATION (mW)
T
A
,
AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
Typical Curves – DCX124EK
PNP Section
350
V
CE
= -5V
I
b
= 0.9mA
I
b
= 0.8mA
I
b
= 0.7mA
I
b
= 0.6mA
I
b
= 0.5mA
I
b
= 0.2mA
I
b
= 0.1mA
I
b
= 0.3mA
I
b
= 0.4mA
T
A
= 150
°
C
T
A
= 125
°
C
300
250
200
150
100
50
0
0.1
T
A
= 85
°
C
I
C
, COLLECTOR CURRENT (A)
T
A
= 25
°
C
1
10
100
1,000
I
C
/I
B
= 10
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 150
°
C
V
CE
= -5V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 125
°
C
T
A
= 150
°
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
I
C
/I
B
= 10
V
CE
= -0.3V
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 125
°
C
T
A
= 25
°
C
T
A
= -55
°
C
T
A
= 150
°
C
T
A
= 150
°
C
T
A
= 85
°
C
T
A
= 125
°
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 V
I(ON)
vs. I
C
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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October 2008
© Diodes Incorporated
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