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UFZT600TC

Description
Power Bipolar Transistor, 2A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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UFZT600TC Overview

Power Bipolar Transistor, 2A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UFZT600TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-223, 4 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-based maximum capacity15 pF
Collector-emitter maximum voltage140 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max1.2 V

UFZT600TC Related Products

UFZT600TC
Description Power Bipolar Transistor, 2A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified? conform to
Maker Zetex Semiconductors
package instruction SOT-223, 4 PIN
Reach Compliance Code not_compliant
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 2 A
Collector-based maximum capacity 15 pF
Collector-emitter maximum voltage 140 V
Configuration DARLINGTON
Minimum DC current gain (hFE) 1000
JESD-30 code R-PDSO-G4
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 4
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 250 MHz
VCEsat-Max 1.2 V

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