2SB1278TL2P datasheet, PDF - EEWORLD Datasheet

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2SB1278TL2P: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size93KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SB1278TL2P Overview

Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

2SB1278TL2P Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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2SB1278TL2P Related Products

	2SB1278TL2P	2SB1278TL2R	2SB1278TL2Q	2SB1278TL2/R	2SB1278TL2/Q	2SB1278TL2	2SB1278TL2/P
Description	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	700mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR	700mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	700mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
Collector-emitter maximum voltage	80 V	80 V	80 V	80 V	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	180	120	180	120	82	82
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	SWITCHING	SWITCHING	AMPLIFIER	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1	1	1	1
ECCN code	EAR99	EAR99	EAR99	-	-	EAR99	-

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