This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J001
(Tentative)
Silicon epitaxial planar type
For band switching
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Forward current
Operating ambient temperature
*
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
–25 to +85
–55 to +150
Unit
V
mA
°C
°C
Package
Code
SMini2-F5-B
Name
Pin
1: Cathode
2: Anode
Note) *: Maximum ambient temperature during operation.
Marking Symbol: D1
Electrical Characteristics
T
a
= 25°C
Parameter
Forward voltage
Reverse current
Diode capacitance
Forward dynamic resistance
*
Symbol
V
F
I
R
C
D
r
f
I
F
= 100 mA
V
R
= 33 V
V
R
= 6 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
Conditions
Min
Typ
Max
1.0
100
1.2
0.85
Unit
V
nA
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: Measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
Publication date: October 2009
ZKF00136AED
1
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semiconductors de
(1)
If any of the products or technical information described in thi
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(3) The products described in this book are intended to be used for s
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Consult our sales staff in advance for information on the followi
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(4) The products and product specifications described in this book
provement. At the final stage of your design, purchasing, or u
Standards in advance to make sure that the latest specifications s
(5) When designing your equipment, comply with the range of a
(operating power supply voltage and operating environment etc
maximum rating on the transient state, such as power-on, powe
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values
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