Tentative
DA2DF62
Silicon epitaxial planar type
For high frequency rectification
Marking Symbol : DA2DF62
Package Code : TO-220D-B1
Absolute Maximum Ratings Ta = 25 °C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak peak reverse voltage
Forward current
Ta = 25 °C
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
DA2DF62
Total pages
page
Symbol
VRRM
VRSM
IF(AV)
IFSM
Tj
Tstg
Rating
600
600
10
40
150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Note: 1. *1 50 Hz sine wave 1cycle(Non-repetitive peak current)
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Themal resistance
Themal resistance
*1
Symbol
VF
IRRM
trr
Rth(j-c)
Rth(j-a)
Conditions
IF = 10 A
VRRM = 600 V
IF = 0.5 A, VR = 1.0 A
Irr = 0.25 A
Min
Typ
1.4
25
Max
1.7
10
40
4.0
63
Unit
V
μA
ns
°C / W
°C / W
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for Diodes.
2. Absolute frequency of input and outpot is 10 MHz
3. *1 R-load trr test circuit
Packing
Magagine 50 pcs
2009.10.28
2010.8.31
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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semiconductors de
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