Tentative
DA26101
Silicon epitaxial planar type
For high speed switching circuits
Marking Symbol : A1
Package Code : ML2-N3-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current
*1
Junction temperature
Storage temperature
Note: 1. *1
t = 1 s
DA26101
Total pages
page
Symbol
VR
VRM
IF
IFM
IFSM
Tj
Tstg
Rating
80
80
100
225
500
125
-55 to +125
Unit
V
V
mA
mA
mA
°C
°C
Pin name
1.
Cathode
2.
Anode
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
VF
VR
IR
Ct
trr
Conditions
IF = 100 mA
IR = 100
μA
VR = 80 V
VR = 0 V , f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.25 x IR
Min
80
Typ
0.92
Max
1.20
100
1.2
3
Unit
V
V
nA
pF
ns
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for Diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *1 trr test circuit
Irr = 0.25 × IR
IF = 10 mA
VR = 6 V
Packing
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel
2010.4.7
2010.7.27
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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semiconductors de
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