This product complies with the RoHS Directive (EU 2002/95/EC).
DA22F21
Silicon epitaxial planar type
For high speed switching circuits
Features
Package
Code
Mini2-F4-B
Name
Pin
1: Cathode
2: Anode
Short reverse recovery time t
rr
Low impedance by clip bonding package
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: 3Q
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
F
I
FSM
T
j
T
stg
Rating
200
200
1.0
15
–40 to +150
–40 to +150
Unit
V
V
A
A
°C
°C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
RRM
C
t
t
rr
I
F
= 1.0 A
V
RRM
= 200 V
V
R
= 0 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25
×
I
R
60
35
Conditions
Min
Typ
Max
0.98
10
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
50
Ω
50
Ω
t
rr
D.U.T.
I
F
I
R
0.25
×
I
R
5.5
Ω
Publication date: June 2010
ZKJ00030CED
1
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semiconductors de
(1)
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this book for any special application.
(4) The products and product specifications described in this book
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(5) When designing your equipment, comply with the range of a
(operating power supply voltage and operating environment etc
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