DA2S001
Tentative
DA2S001
Silicon epitaxial planar type
For band switching
Marking Symbol : D1
Package Code : SSMini2-F5-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Reverse voltage(DC)
Forward current (DC)
Junction temperature
Operating ambient temperature
Storage temperature
Total pages
page
Symbol
VR
IF
Tj
Topr
Tstg
Rating
35
100
150
-25 to +85
-55 to +150
Unit
V
mA
°C
°C
°C
Pin name
1.
Cathode
2.
Anode
*1
Note: 1. *1 Maximum ambient temperature during operation.
Electrical Characteristics Ta = 25 °C
Parameter
Forward voltage(DC)
Reverse current(DC)
Diode capacitance
Forward dynamic resistance
Symbol
VF
IR
CD
rf
Conditions
IF = 100 mA
VR = 33 V
VR = 6 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
Min
Typ
Max
1.0
100
1.2
0.85
Unit
V
nA
pF
Ω
*1
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *1 Measuring instrument:YHP MODEL 4191A RF IMPEDANCE ANALYZER
Packing
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel
2010.1.28
2010.7.29
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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