DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
Dim
A
SOT-563
Min
0.15
1.10
1.55
Max
0.30
1.25
1.70
0.50
0.90
1.50
0.56
0.15
0.10
1.10
1.70
0.60
0.25
0.18
1.00
1.60
0.60
0.20
0.11
Typ
0.25
1.20
1.60
NE W P RO DUC T
CXXYM
D
G
B C
B
C
D
G
H
Mechanical Data
•
•
•
•
•
•
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
K
H
M
K
L
M
L
All Dimensions in mm
P/N
DCX122LH
DCX142JH
DCX122TH
DCX142TH
R1 (NOM)
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
R2 (NOM)
10KΩ
10KΩ
OPEN
OPEN
MARKING
C81
C82
C83
C84
R
1
R
2
R
2
R
1
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM, TOP VIEW
Maximum Ratings NPN Section
Characteristic
Supply Voltage
Input Voltage
Input Voltage
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DCX122LH
DCX142JH
DCX122TH
DCX142TH
All
(Note 1, 2)
(Note 1)
V
IN
V
EBO (MAX)
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
50
-5 to +6
-5 to +6
5
100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
NPN Section, PNP Section, or maximum combined.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30429 Rev. 3 - 2
1 of 4
www.diodes.com
DCX (LO-R1) H
© Diodes Incorporated
Maximum Ratings PNP Section
Characteristic
Supply Voltage
Input Voltage
Input Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DCX122LH
DCX142JH
DCX122TH
DCX142TH
All
(Note 1, 2)
(Note 1)
V
IN
V
EBO (MAX)
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
-50
+5 to -6
+5 to -6
-5
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
NEW PRODUCT
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Electrical Characteristics NPN Section
Characteristic
Input Voltage
DCX122LH
DCX142JH
DCX122LH
DCX142JH
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Min
0.3
0.3
⎯
⎯
⎯
⎯
56
56
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
2.0
2.0
0.3V
28
13
0.5
⎯
⎯
Unit
V
V
V
mA
μA
⎯
R1, R2 Types
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 5mA/0.25mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 10mA
Symbol
V
l(off)
V
l(on)
V
O(on)
DCX122LH
DCX142JH
I
l
I
O(off)
DDCX122LH
DDCX142JH
G
l
f
T
MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics NPN Section
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Min
50
40
5
⎯
⎯
⎯
⎯
100
100
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
250
250
200
Max
⎯
⎯
⎯
0.5
0.5
0.5
0.3
600
600
⎯
Unit
V
V
V
μA
μA
V
⎯
R1-Only
Test Condition
I
C
= 50μA
I
C
= 1mA
I
E
= 50μA
I
E
= 50μA
V
CB
= 50V
V
EB
= 4V
I
C
= 5mA, I
B
= 0.25mA
I
C
= 1mA, V
CE
= 5V
Symbol
BV
CBO
BV
CEO
DCX122TH
DCX142TH
BV
EBO
I
CBO
DCX122TH
DCX142TH
I
EBO
V
CE(sat)
DCX122TH
DCX142TH
h
FE
f
T
MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
DS30429 Rev. 3 - 2
2 of 4
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DCX (LO-R1) H
© Diodes Incorporated
Electrical Characteristics PNP Section
Characteristic
Input Voltage
DCX122LH
DCX142JH
DCX122LH
DCX142JH
@T
A
= 25°C unless otherwise specified
Min
-0.3
-0.3
⎯
⎯
⎯
⎯
56
56
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
-2.0
-2.0
-0.3V
-28
-13
-0.5
⎯
⎯
Unit
V
V
V
mA
μA
⎯
R1, R2 Types
Test Condition
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
l
= -5mA/-0.25mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -10mA
Symbol
V
l(off)
V
l(on)
V
O(on)
DCX122LH
DCX142JH
I
l
I
O(off)
DCX122LH
DCX142JH
G
l
f
T
NEW PRODUCT
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
DCX122TH
DCX142TH
BV
EBO
I
CBO
DCX122TH
DCX142TH
I
EBO
V
CE(sat)
DCX122TH
DCX142TH
h
FE
f
T
Min
-50
-40
-5
⎯
⎯
⎯
⎯
100
100
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
250
250
200
R1-Only Types
Max
⎯
⎯
⎯
-0.5
-0.5
-0.5
-0.3
600
600
⎯
Unit
V
V
V
μA
μA
V
⎯
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
I
E
= -50μA
V
CB
= -50V
V
EB
= -4V
I
C
= -5mA, I
B
= -0.25mA
I
C
= -1mA, V
CE
= -5V
Test Condition
MHz V
CE
= -10V, I
E
= 5mA, f = 100MHz
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Derating Curve - Total
DS30429 Rev. 3 - 2
3 of 4
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DCX (LO-R1) H
© Diodes Incorporated
Ordering Information
(Note 6)
Device
DCX122LH-7
DCX142JH-7
Packaging
SOT-563
SOT-563
SOT-563
SOT-563
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
NEW PRODUCT
DCX122TH-7
DCX142TH-7
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXXYM
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
Apr
4
2005
S
May
5
2006
T
Jun
6
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30429 Rev. 3 - 2
4 of 4
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DCX (LO-R1) H
© Diodes Incorporated
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