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DB24404

Description
3 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size280KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB24404 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE

DB24404 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTMINIP2-F2-B, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.53 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.03 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
Tentative
DB24404
Silicon epitaxial planar type
For rectification
Marking Symbol : A8
Package Code : TMiniP2-F2-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
DB24404
Total pages
page
Symbol
VR
VRM
IF(AV)
IFSM
Tj
Tstg
Rating
40
40
3.0
60
125
-40 to +125
Unit
V
V
A
A
°C
°C
Pin name
1.
Cathode
2.
Anode
Note: 1. *1 50Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
VF
IR
Ct
trr
Conditions
IF = 3.0 A
VR = 40 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 10 mA, RL = 100
Ω
Min
Typ
85
30
Max
0.53
50
Unit
V
μA
pF
ns
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the
charge of a human body and the leakage of current from the operating equipment.
3. *1 trr Test Circuit
Bias Insertion Unit
(N-50BU)
Input Pulse
Output Pulse
I
rr
= 10 mA
Pulse Generator
(PG-10N)
R
S
= 50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Ω
Packing
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel
2010.4.23
2010.7.27
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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