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DE2S068

Description
6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size336KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DE2S068 Overview

6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DE2S068 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeSSMINI2-F5-B
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current1 mA
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DE2S068
Silicon epitaxial planar type
For ESD protection
Features
High electrostatic discharge ESD
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSMini2-F5-B
Name
Pin
1. Cathode
2. Anode
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Marking Symbol: E2
Unit
mW
kV
°C
°C
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Total power dissipation
*1
Electrostatic discharge
*2
Junction temperature
Storage temperature
Symbol
P
T
ESD
T
j
T
stg
Rating
150
±30
150
–55 to +150
Note) *1: P
T
= 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330
W,
Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Zener voltage
*1, 2
Reverse current
Terminal capacitance
Temperature coefficient of zener voltage
*3
Symbol
V
Z
I
R
C
t
S
Z
I
R
= 1 mA
V
R
= 4 V
V
R
= 0 V, f = 1 MHz
I
Z
= 1 mA
50
3.0
Conditions
Min
6.46
Typ
Max
7.14
0.5
Unit
V
mA
pF
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2 : V
Z
guaranteed 20 ms after current flow.
*3 : T
j
= 25°C to 150°C
Publication date: October 2010
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