This product complies with the RoHS Directive (EU 2002/95/EC).
DE3S062D
Silicon epitaxial planar type
For surge absorption circuits
Features
High electrostatic discharge ESD
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSMini3-F3-B
Name
Pin
1: Cathode-1
2: Cathode-2
3: Anode-1, 2
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Total power dissipation
Electrostatic discharge
Junction temperature
Storage temperature
*1
*2
Marking Symbol: 41
Rating
150
±30
150
–55 to +150
Unit
mW
kV
°C
°C
1
2
Symbol
P
T
ESD
T
j
T
stg
Internal Connection
3
Note) *1: P
T
= 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330
W,
Contact discharge: 10 times)
Common Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Zener voltage
*1, 2
Reverse current
Terminal capacitance
Temperature coefficient of zener voltage
*3
Symbol
V
Z
I
R
C
t
S
Z
I
Z
= 1 mA
V
R
= 4 V
V
R
= 0 V, f = 1 MHz
I
Z
= 1 mA
55
2.3
Conditions
Min
5.89
Typ
Max
6.51
1
Unit
V
µA
pF
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
* 2: V
Z
guaranteed 20 ms after current flow.
*3: T
j
= 25°C to 150°C
Publication date: November 2010
Ver. AED
1
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semiconductors de
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(4) The products and product specifications described in this book
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(5) When designing your equipment, comply with the range of a
(operating power supply voltage and operating environment etc
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