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DFLS1200_08

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size72KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DFLS1200_08 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

DFLS1200_08 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, POWERDI 123, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A
DFLS1200
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PowerDI
®
123
Please click here to visit our online spice models database.
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Patented Interlocking Clip Design for High Surge Current
Capacity
Lead Free Finish, RoHS Compliant (Note 4)
"Green" Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI 123
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: Cathode Band
Terminals: Finish – Matte Tin annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.01 grams (approximate)
®
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
I
FSM
Value
200
141
1.0
40
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Soldering Point (Note 2)
Operating and Storage Temperature Range
Symbol
R
θ
JA
R
θ
JS
T
J
, T
STG
Typ
132
-65 to +175
Max
7
Unit
°C/W
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage
Leakage Current (Note 3)
Total Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
Min
200
Typ
23
Max
0.85
2
Unit
V
V
μA
pF
Test Condition
I
R
= 8μA
I
F
= 1.0A
V
R
= 200V, T
A
= 25°C
V
R
= 5VDC, f = 1MHz
1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf. T
A
= 25°C
2. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
3. Short duration pulse test used to minimize self-heating effect.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see
EU Directive 2002/95/EC Annex Notes.
PowerDI is a registered trademark of Diodes Incorporated.
DFLS1200
Document number: DS30628 Rev. 6 - 2
1 of 3
www.diodes.com
October 2008
© Diodes Incorporated
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