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DN350T05

Description
500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size87KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DN350T05 Overview

500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DN350T05 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage350 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor15
Rated crossover frequency50 MHz
DN350T05
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DP350T05)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS
Compliant "Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High
Reliability
A
C
B
B
E
TOP VIEW
C
E
D
G
H
K
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Finish annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: K3S, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
M
L
J
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θ
JA
T
J
, T
STG
Value
350
350
5.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb
2
O
3
Fire Retardants.
DS30625 Rev. 8 - 2
1 of 4
www.diodes.com
DN350T05
© Diodes Incorporated

DN350T05 Related Products

DN350T05 DN350T05_1
Description 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 0.5000 A 0.5000 A
Maximum Collector-Emitter Voltage 350 V 350 V
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 15 15
Rated crossover frequency 50 MHz 50 MHz
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