DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
Features
•
•
•
•
Epitaxial Planar Die Construction
One Transistor and One Switching Diode in One Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
A
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
⎯
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.008 grams (approximate)
H
K
M
B
C
D
F
H
J
K
L
M
α
0.65 Nominal
J
D
F
L
All Dimensions in mm
P/N
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
R1 (NOM) R2 (NOM)
1K
10K
1K
10K
220
4.7K
220
4.7K
DRDN010W/
DRDN005W
DRDP006W
R2
R1
R1
R2
DRDNB16W/
DRDNB26W
DRDPB16W/
DRDPB26W
Maximum Ratings, Total Device
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, DRDN010W NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
45
18
5
1000
Unit
V
V
V
mA
Maximum Ratings, DRDN005W NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
80
80
4.0
500
Unit
V
V
V
mA
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30573 Rev. 10 - 2
1 of 9
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DRD (xxxx) W
© Diodes Incorporated
Maximum Ratings, DRDP006W PNP Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-60
-60
-5.0
-600
Unit
V
V
V
mA
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
CC
V
IN
I
C
@T
A
= 25°C unless otherwise specified
Value
50
-5 to +10
600
Unit
V
V
mA
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
CC
V
IN
I
C
@T
A
= 25°C unless otherwise specified
Value
50
-5 to +5
600
Unit
V
V
mA
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
CC
V
IN
I
C
@T
A
= 25°C unless otherwise specified
Value
-50
+5 to -10
600
Unit
V
V
mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
CC
V
IN
I
C
@T
A
= 25°C unless otherwise specified
Value
-50
+5 to -5
-600
Unit
V
V
mA
Maximum Ratings, Switching Diode
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Value
100
75
53
500
250
4.0
2.0
Unit
V
V
V
mA
mA
A
(Note 3)
(Note 3)
@ t = 1.0μs
@ t = 1.0s
DS30573 Rev. 10 - 2
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DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDN010W NPN Transistor
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
h
FE
V
CE(SAT)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
f
T
C
obo
Min
150
⎯
45
18
5
⎯
⎯
100
⎯
@T
A
= 25°C unless otherwise specified
Max
800
0.5
⎯
⎯
⎯
1
1
⎯
8
Unit
⎯
V
V
V
V
μA
μA
MHz
pF
Test Condition
I
C
= 100mA, V
CE
= 1V
I
C
= 300mA, I
B
= 30mA
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 50mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
Min
80
80
4.0
⎯
⎯
100
⎯
⎯
100
@T
A
= 25°C unless otherwise specified
Max
⎯
⎯
⎯
100
100
⎯
0.25
1.2
⎯
Unit
V
V
V
nA
nA
⎯
V
V
MHz
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1.0V
V
CE
= 2.0V, I
C
= 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
h
FE
V
CE(SAT)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
f
T
C
obo
Min
100
⎯
-60
-60
-5
⎯
200
⎯
@T
A
= 25°C unless otherwise specified
Max
300
-0.4
⎯
⎯
⎯
-10
⎯
8
Unit
⎯
V
V
V
V
nA
MHz
pF
Test Condition
I
C
= -150mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -10μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CE
= -20V, I
C
= -50mA, f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
0.3
⎯
⎯
⎯
⎯
56
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
2.0
0.3V
7.2
0.5
⎯
⎯
Unit
V
V
V
mA
@T
A
= 25°C unless otherwise specified
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 50mA/2.5mA
V
I
= 5V
μA
V
CC
= 50V, V
I
= 0V
⎯
V
O
= 5V, I
O
= 50mA
MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
DS30573 Rev. 10 - 2
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DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
0.5
⎯
⎯
⎯
⎯
47
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
3.0
0.3V
28
0.5
⎯
⎯
Unit
V
V
V
mA
@T
A
= 25°C unless otherwise specified
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 50mA/2.5mA
V
I
= 5V
μA
V
CC
= 50V, V
I
= 0V
⎯
V
O
= 5V, I
O
= 50mA
MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
-0.3
⎯
⎯
⎯
⎯
56
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
-2.0
-0.3V
-7.2
-0.5
⎯
⎯
Unit
V
V
V
mA
@T
A
= 25°C unless otherwise specified
Test Condition
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
l
= -50mA/-2.5mA
V
I
= -5V
μA
V
CC
= -50V, V
I
= 0V
⎯
V
O
= -5V, I
O
= -50mA
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
-0.5
⎯
⎯
⎯
⎯
47
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
-3.0
-0.3V
-28
-0.5
⎯
⎯
Unit
V
V
V
mA
@T
A
= 25°C unless otherwise specified
Test Condition
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
l
= -50mA/-2.5mA
V
I
= -5V
μA
V
CC
= -50V, V
I
= 0V
⎯
V
O
= -5V, I
O
= -50mA
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, Switching Diode
Characteristic
Reverse Breakdown Voltage (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
0.62
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
⎯
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 10μA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Forward Voltage
Reverse Current (Note 4)
I
R
C
T
t
rr
Total Capacitance
Reverse Recovery Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS30573 Rev. 10 - 2
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DRD (xxxx) W
© Diodes Incorporated
Device Characteristics
250
P
D
, POWER DISSIPATION (mW)
1,000
200
R
θJA
= 625°C/W
150
h
FE
, DC CURRENT GAIN
100
100
50
V
CE
= 1.0V
0
0
80
120
160
40
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
1
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain
vs. Collector Current (DRDN010W)
10
100
f = 1MHz
1,000
C
OBO
, OUTPUT CAPACITANCE (pF)
V
CE (SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
100
10
10
1
0.1
1
1
10
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Typical Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
100
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4, Typical Collector Saturation Voltage vs.
Collector Current (DRDN010W)
I
CBO
, COLLECTOR-BASE CURRENT (nA)
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
10
2.0
1.8
1.6
1.4
I
C
= 10mA
I
C
= 30mA
1
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1
0.1
10
100
I
B,
BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region (DRDN005W)
0.01
I
C
= 100mA
I
C
= 1mA
0.1
0.01
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
DS30573 Rev. 10 - 2
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© Diodes Incorporated
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