DVRN6056
VOLTAGE REFERENCE ARRAY
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26 (SC74R)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish Annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (Approximate)
SOT26 (SC74R)
K
1
NC
E
1
Z1
Q1
A
1
B
1
C
1
Top View
Device Schematic
Ordering Information
(Note 4)
Part Number
DVRN6056-7-F
Notes:
Case
SOT26 (SC74R)
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AH1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
A 1
H
Date Code Key
Year
2003
Code
P
Month
Code
Jan
1
2004
R
Feb
2
2005
S
Mar
3
…..
…..
Apr
4
2012
Z
May
5
YM
2013
A
Jun
6
2014
B
Jul
7
2015
C
2016
D
Aug
8
2017
E
Sep
9
2018
F
Oct
O
2019
G
Nov
N
2020
H
Dec
D
DVRN6056
Document number: DS30556 Rev. 6 - 2
1 of 7
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August 2018
© Diodes Incorporated
DVRN6056
Maximum Ratings, NPN Transistor Element (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6.0
600
Unit
V
V
V
mA
(Note 5)
Maximum Ratings, Zener Element (Z1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Forward Voltage
@ I
F
= 10mA
Symbol
V
F
Value
0.9
Unit
V
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
(Note 5)
(Note 5)
Symbol
P
D
R
θJA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
C/W
C
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
Electrical Characteristics, NPN Transistor Element (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
60
40
6
20
40
80
100
40
0.75
Max
100
100
300
0.40
0.75
0.95
1.2
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 35V, V
EB(OFF)
= 0.4V
V
CE
= 35V, V
EB(OFF)
= 0.4V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
V
V
Electrical Characteristics, Zener Element (Z1)
(@T
A
= +25°C, unless otherwise specified.)
Zener Voltage Range (Note 6)
Nom (V)
5.6
Note:
Maximum Zener Impedance
I
ZT
mA
5
Z
ZT
@ I
ZT
60
Z
ZK
@ I
ZK
= 0.5mA
Ω
200
V
Z
@ I
ZT
Min (V)
5.49
Max (V)
5.73
Maximum Reverse
Leakage Current (Note 6)
I
R
@ V
R
µA
V
1.0
2.5
6. Short duration pulse test used to minimize self-heating effect.
DVRN6056
Document number: DS30556 Rev. 6 - 2
2 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DVRN6056
NPN Transistor (Q1)
400
350
P
D
, POWER DISSIPATION (mW)
1,000
300
250
200
150
100
50
T
A
= 125°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= +25°C
10
V
CE
= 1.0V
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device)
0
25
0
30
1,000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
2.0
1
0.1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
f = 1MHz
20
C
ibo
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
CAPACITANCE (pF)
10
5.0
C
obo
1.0
0.1
1.0
10
50
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance Characteristics
0
0.001
0.1
10
1
I
B
, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.01
100
DVRN6056
Document number: DS30556 Rev. 6 - 2
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August 2018
© Diodes Incorporated
DVRN6056
NPN Transistor (Q1)
(Continued)
0.5
I
C
I
B
= 10
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
CE
= 5V
T
A
= -50°C
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
T
A
= 25°C
0.3
T
A
= 150°C
T
A
= 25°C
0.2
T
A
= 150°C
0.1
T
A
= -50°C
0
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
1
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
1
DVRN6056
Document number: DS30556 Rev. 6 - 2
4 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DVRN6056
Zener (Z1)
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1,000
100
10
1.0
0.1
0.01
0
1.2
0.6
0.8
0.4
1.0
0.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 8 Typical Forward Characteristics
DVRN6056
Document number: DS30556 Rev. 6 - 2
5 of 7
www.diodes.com
August 2018
© Diodes Incorporated
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