DVR1V8W - DVR5V0W
COMPLEX ARRAY FOR VOLTAGE REGULATORS
Features
•
•
Epitaxial Planar Die Construction
Selectively Paired NPN Transistors & Zener Diodes for
Series Pass Voltage Regulator Circuits
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
A
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
⎯
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
NEW PR OD UC T
ODU C
•
•
•
B
C
D
F
0.65 Nominal
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking & Type Code Information: See Page 5
Ordering Information: See Page 5
Weight: 0.008 grams (approximate)
K
H
M
H
J
K
L
M
J
D
F
L
K
1
B
1
E
1
8°
α
All Dimensions in mm
A
1
NC
C
1
Maximum Ratings, Total Device
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
(Note 3)
(Note 3)
P
d
R
θ
JA
T
j
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
(Note 3)
I
C
Value
45
18
5
1
Unit
V
V
V
A
Maximum Ratings, Zener Element
Characteristic
Forward Voltage
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
Value
0.9
Unit
V
@ I
F
= 10mA
V
F
1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30578 Rev. 5 - 2
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DVR1V8W - DVR5V0W
© Diodes Incorporated
Electrical Characteristics, NPN Transistor
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
C
obo
f
T
Min
45
18
5
⎯
⎯
150
⎯
⎯
100
Max
⎯
⎯
⎯
1
1
800
0.5
8
⎯
Unit
V
V
V
μA
μA
⎯
V
pF
MHz
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100mA, V
CE
= 1V
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CB
= 10V, I
E
= 50mA, f = 100MHz
NEW PRODUCT
Electrical Characteristics, Zener Element
Type
Number
Nom (V)
DVR1V8W
DVR2V5W
DVR3V3W
DVR5V0W
Notes:
@T
A
= 25°C unless otherwise specified
Maximum Reverse
Leakage Current
I
ZT
Max (V)
3.5
4.1
5.0
5.36
mA
5
5
5
0.05
μA
5
3
3
5
I
R
@ V
R
V
1
1
2
3
Zener Voltage Range (Note 5)
V
Z
@ I
ZT
Min (V)
3.1
3.7
4.4
4.85
3.3
3.9
4.7
5.1
4. Short duration test pulse used to minimize self-heating effect.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
T
= 30°C ±1°C.
.
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DVR1V8W - DVR5V0W
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200
1,000
P
d
, POWER DISSIPATION (mW)
150
NEW PRODUCT
100
h
FE
, DC CURRENT GAIN
100
50
0
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device)
25
0
V
CE
= 1.0V
.001
.01
.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current (NPN Transistor)
1
0.0001
100
C
OBO
, OUTPUT CAPACITANCE (pF)
1,000
V
CE (SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
100
10
1
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 3 Output Capacitance vs.
Collector-Base Voltage (NPN Transistor)
100
10
10
1
0.1
1
0.0001 .001
.01
.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Collector Saturation Voltage vs.
Collector Current (NPN Transistor)
10
50
1,000
T
j
= 25 °C
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
40
I
Z
, ZENER CURRENT (mA)
V
R
= 1V
V
R
= 2V
30
100
V
R
= 1V
20
10
V
R
= 2V
0
0
1
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 5 Zener Breakdown Characteristics
(DVR1V8W - DVR3V3W)
2
10
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 6 Total Capacitance vs. Nominal Zener Voltage
(DVR1V8W - DVR3V3W)
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© Diodes Incorporated
100
T
j
= 25 °C
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
V
R
=1V
V
R
= 2V
NEW PRODUCT
10
1
1
V
Z
, ZENER VOLTAGE (V)
Fig. 7
Zener Breakdown Characteristics (DVR5V0W)
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 8 Total Capacitance vs. Nominal Zener Voltage
(DVR5V0W)
Ordering Information
(Note 6)
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Device
DVR1V8W-7
DVR2V5W-7
DVR3V3W-7
DVR5V0W-7
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXXX = Product Type Marking Code,
See Table Above, e.g., VR01 = DVR1V8W
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
XXXX
Date Code Key
Year
Code
Month
Code
2004
R
Jan
1
Feb
2
2005
S
Mar
3
2006
T
Apr
4
YM
2007
U
May
5
Jun
6
2008
V
Jul
7
2009
W
Aug
8
2010
X
Sep
9
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
Sample Applications
VCC = 6.0V
R1 = 560R
Q1
Vo(nom) = 5.0V
Z1
Sample Application for DVR5V0W:
9
7
VCC = 6.0V
R1 = 560Ω
Vo(nom) = 5.0V
Io = 100mA
8
Iq(typical ) = 0.5mA @ Io = 0mA
8
Typical Vreg(load) = 0.2V from Io = 100mA to 0mA
DVR5V0W
R Load
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© Diodes Incorporated
VCC = 4.3V
R1 = 370R
Q1
Sample Application for DVR3V3W:
9
7
VCC = 4.3V
R1 = 3700Ω
Vo(nom) = 3.3V
Io = 100mA
8
Iq(typical ) = 0.7mA @ Io = 0mA
8
Typical Vreg(load) = 0.21V from Io = 100mA to 0mA
Vo(nom) = 3.3V
NEW PRODUCT
Z1
DVR3V3W
R Load
VCC = 3.5V
R1 = 250R
Q1
Vo(nom) = 2.5V
Z1
Sample Application for DVR2V5W:
9
7
VCC = 3.5V
R1 = 250Ω
Vo(nom) = 2.5V
Io = 100mA
8
Iq(typical ) = 0.91mA @ Io = 0mA
8
Typical Vreg(load) = 0.13V from Io = 100mA to 0mA
DVR2V5W
R Load
VCC = 2.8V
R1 = 450R
Q1
Vo(nom) = 1.8V
Z1
Sample Application for DVR1V8W:
9
R17= 450Ω
VCC = 2.8V
Vo(nom) = 1.8V
Io = 100mA
8
Iq(typical ) = 0.55mA @ Io = 0mA
8
Typical Vreg(load) = 0.25V from Io = 100mA to 0mA
DVR1V8W
R Load
Notes:
7. Resistor R1 not included.
8. Typical performance shown is under setup and operating conditions specified in the sample applications.
9. Recommended VCC(min) ~ Vo(nom) + 1V.
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30578 Rev. 5 - 2
5 of 5
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DVR1V8W - DVR5V0W
© Diodes Incorporated
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