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DZTA92

Description
500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size202KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DZTA92 Overview

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DZTA92 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityPNP
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage300 V
Processing package descriptionGREEN, PLASTIC PACKAGE-4
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor25
Rated crossover frequency50 MHz
DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
NEW PRODUCT
SOT-223
COLLECTOR
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
Value
-300
-300
-5
-100
-500
3 E
C4
2 C
1 B
TOP VIEW
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Characteristic
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient @ T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
ο
Unit
W
C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
-300
-300
-5
25
40
25
50
Typ
Max
-0.25
-0.1
-0.5
-0.9
6
Unit
V
V
V
μA
μA
V
V
V
Test Conditions
I
C
= -100μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -200V, I
E
= 0
V
EB
= -3V, I
C
= 0
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -20V, f = 100MHz
V
CB
= -20V, f = 1MHz
f
T
C
obo
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%
DS30521 Rev. 4 - 2
1 of 4
www.diodes.com
DZTA92
© Diodes Incorporated

DZTA92 Related Products

DZTA92 DZTA92-13
Description 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 4 4
Transistor polarity PNP PNP
Maximum collector current 0.5000 A 0.5000 A
Maximum Collector-Emitter Voltage 300 V 300 V
Processing package description GREEN, PLASTIC PACKAGE-4 GREEN, PLASTIC PACKAGE-4
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 25 25
Rated crossover frequency 50 MHz 50 MHz
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