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DZT2222A

Description
600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size185KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DZT2222A Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DZT2222A Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityNPN
Maximum on-time35 ns
Maximum off time285 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionGREEN, PLASTIC PACKAGE-4
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor40
Rated crossover frequency300 MHz
DZT2222A
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT2907A)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
NEW PRODUCT
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
75
40
6
600
Unit
V
V
V
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30481 Rev. 5 - 2
1 of 4
www.diodes.com
DZT2222A
© Diodes Incorporated

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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