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DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1069/1069A are the mold power transistors developed for <R>
ORDERING INFORMATION
high-speed switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
Part No.
2SA1069
2SA1069A
2SA1069-Z
2SA1069A-Z
Package
TO-220AB
(MP-25)
TO-220SMD
(MP-25Z)
FEATURES
• Low collector saturation voltage
• Fast switching speed
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25°C
T
A
= 25°C
PW
≤
300
μ
s,
duty cycle
≤
10%
Conditions
Ratings
−80
−60/−80
−12
−5.0
−10
−2.5
30
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
<R>
(TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14855EJ3V1DS00 (3rd edition)
Date Published January 2010 N
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an ‘‘<R>"
in the PDF file and specifying it in the ‘‘Find what:’’ field.
2002
Embedded System
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