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3.0SMCJ20A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size87KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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3.0SMCJ20A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

 
Green
3.0SMCJ5.0A /14A /20A /22A /24A /28A /30A /58A
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
3000W Peak Pulse Power Dissipation
Glass Passivated Die Construction
Excellent Clamping Capability
Fast Response Time
Lead Free Finish, RoHS Compliant (Note 4)
Green Molding Compound (No Halogen and Antimony)
(Note 8)
Mechanical Data
Case: SMC
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish).
Polarity Indicator: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.21 grams (approximate)
Top View
Bottom View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Pulse Power Dissipation (Note 1)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Superimposed on Rated Load (Notes 2 & 3)
Symbol
P
PK
I
FSM
Value
3000
300
Unit
W
A
Thermal Characteristics
Characteristic
Operating and Storage Temperature Range
Symbol
T
J
, T
STG
Value
-55 to +175
Unit
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Part Number
See Notes 4, 6
3.0SMCJ5.0A
3
.
0SMCJ14A
3.0SMCJ20A
3.0SMCJ22A
3.0SMCJ24A
3.0SMCJ28A
3.0SMCJ30A
3.0SMCJ58A
Notes:
Reverse
Standoff
Voltage
V
RWM
(V)
5.0
14.0
20.0
22.0
24.0
28.0
30.0
58.0
Breakdown
Voltage
V
BR
@ I
T
(Note 5)
Min (V)
6.40
15.60
22.20
24.40
26.70
31.10
33.30
64.40
Max (V)
7.07
17.2
24.5
27.0
29.5
34.4
36.8
71.2
Test
Current
I
T
(mA)
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max. Reverse
Leakage
@ V
RWM
I
R
(μA)
1000
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Max.
Clamping
Voltage
@ I
pp
V
C
(V)
9.2
23.2
32.4
35.5
38.9
45.4
48.4
93.6
Max. Peak
Pulse
Current I
pp
(A)
326.1
129.3
92.6
84.5
77.1
66.1
62.0
32.1
Typical Total
Capacitance
(Note 7)
C
T
(pF)
8,000
3,500
3,300
3,000
3,000
1,800
1,700
1,500
Marking
Code
HDE
HEK
HEV
HEX
HEZ
HFG
HFK
HGG
1. Non-repetitive current pulse, per Fig. 4 and derated above T
A
= 25°C per Fig. 1.
2. Mounted on 8.00mm2 (0.013mm thick) land areas.
3. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
5. V
BR
measured with IT current pulse = 300μs.
6. Additional voltages may be available upon request. Please contact the Diodes Incorporated sales department for assistance.
7. V
R
= 0V, f = 1MHz
8. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3.0SMCJ5.0A /14A /20A /22A
/24A /28A /30A /58A
Document number: DS30818 Rev. 11 - 2
1 of 4
www.diodes.com
August 2010
© Diodes Incorporated

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Description 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB TVS DIODE, DO-214AB

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