EEWORLDEEWORLDEEWORLD

Part Number

Search

DCP53-13

Description
PNP SURFACE MOUNT TRANSISTOR
File Size139KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Compare View All

DCP53-13 Online Shopping

Suppliers Part Number Price MOQ In stock  
DCP53-13 - - View Buy Now

DCP53-13 Overview

PNP SURFACE MOUNT TRANSISTOR

Not Recommended for New Design
Alternative is BCP53 & BCP5316
DCP53/-16
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP56)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
-100
-80
-5
-1.5
-1
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Units
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation at T
A
= 25ºC (Note 3)
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @ T
A
= 25ºC (Note 3)
Symbol
P
d
T
j
, T
STG
R
θ
JA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE (ON)
h
FE
DCP53-16
Min
-100
-80
-5
40
25
100
Typ
Max
-100
-20
-10
-0.5
-1.0
250
250
Unit
V
V
V
nA
μA
μA
V
V
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0,
T
A
= 150ºC
V
EB
= -5V, I
C
= 0
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -50mA, V
CE
= -5V,
f = 100MHz
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
f
T
200
MHz
No purposefully added lead.
Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width
=
300μs. Duty cycle
2%.
DCP53/-16
Document number: DS30797 Rev. 5 - 3
1 of 4
www.diodes.com
June 2011
© Diodes Incorporated

DCP53-13 Related Products

DCP53-13 DCP53
Description PNP SURFACE MOUNT TRANSISTOR PNP SURFACE MOUNT TRANSISTOR

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 107  1845  1366  1503  2677  3  38  28  31  54 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号