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DCP54

Description
NPN SURFACE MOUNT TRANSISTOR
File Size150KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DCP54 Overview

NPN SURFACE MOUNT TRANSISTOR

Not Recommended for New Design
Alternative is BCP54 & BCP5416
DCP54/-16
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP51)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
45
5
1
Unit
V
V
V
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T
A
= 25°C (Note 3)
Symbol
P
d
T
j
, T
STG
R
θ
JA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics
Characteristic
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics (Note 4)
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
45
45
5
63
63
40
100
Typ
Max
100
10
10
250
250
500
1
Unit
V
V
V
nA
μA
μA
Test Condition
I
C
= 100μA
I
C
= 10mA
I
E
= 10μA
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 150°C
V
EB
= 5V, I
C
= 0A
I
C
= 5mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 2V
I
C
= 50mA, V
CE
= 5V, f = 100MHz
h
FE
DCP54-16
200
mV
V
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Small Signal Characteristics
Transition Frequency
Notes:
1.
2.
3.
4.
V
CE(SAT)
V
BE(ON)
f
T
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
2%
DCP54/-16
Document number: DS30816 Rev. 6 - 3
1 of 4
www.diodes.com
June 2011
© Diodes Incorporated
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