DCP68/-25
NPN SURFACE MOUNT TRANSISTOR
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Features
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•
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Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP69)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
NEW PRODUCT
Mechanical Data
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•
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Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Value
25
20
5.0
1.0
Units
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25ºC (Note 3)
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to 150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
DCP68, DCP68-25
Min
25
20
25
5.0
—
—
50
60
85
160
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
330
Max
—
—
—
—
100
10
—
—
375
375
0.5
1.0
—
Unit
V
V
V
V
nA
μA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
C
= 10μA, I
E
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
EB
= 5.0V, I
C
= 0
V
CE
= 10V, I
C
= 5.0mA
V
CE
= 1.0V, I
C
= 1.0A
V
CE
= 1.0V, I
C
= 500mA
V
CE
= 1.0V, I
C
= 500mA
I
C
= 1.0A, I
B
= 100mA
V
CE
= 1.0V, I
C
= 1.0A
I
C
= 100mA, V
CE
= 5.0V
f = 100MHz
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
DCP68
DCP68-25
h
FE
V
CE(SAT)
V
BE (ON)
f
T
—
V
V
MHz
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS30797 Rev. 6 - 2
1 of 4
www.diodes.com
DCP68/-25
© Diodes Incorporated
Suggested Pad Layout:
NEW PRODUCT
(Unit: mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30797 Rev. 6 - 2
4 of 4
www.diodes.com
DCP68/-25
© Diodes Incorporated
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