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DCP55-13

Description
NPN SURFACE MOUNT TRANSISTOR
File Size141KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DCP55-13 Overview

NPN SURFACE MOUNT TRANSISTOR

Not Recommended for New Design
Alternative is BCP55 & BCP5516
DCP55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP52)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
SOT-223
3 E
C 4
2 C
COLLECTOR
2,4
1
1 B
TOP VIEW
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Characteristic
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T
A
= 25°C (Note 3)
Symbol
P
d
T
j,
T
STG
R
θ
JA
Value
1 (Note 3)
2 (Note 4)
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(ON)
h
FE
DCP55-16
Min
60
60
5
40
25
100
Typ
200
Max
100
20
10
0.5
1.0
250
250
Unit
V
V
V
nA
μA
μA
V
V
Conditions
I
C
= 100μA, I
E
= 0A
I
C
= 10mA, I
B
= 0A
I
E
= 10μA, I
C
= 0A
V
CB
= 30V, I
E
= 0A
V
CB
= 30V, I
E
= 0A, T
A
= 150°C
V
EB
= 5V, I
C
= 0A
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 50mA, V
CE
= 5V,
f = 100MHz
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Note:
f
T
MHz
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm
2
.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%
DCP55/-16
Document number: DS30707 Rev. 7 - 3
1 of 4
www.diodes.com
June 2011
© Diodes Incorporated

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