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DCP56-16-13

Description
NPN SURFACE MOUNT TRANSISTOR
File Size150KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DCP56-16-13 Overview

NPN SURFACE MOUNT TRANSISTOR

Not Recommended for New Design
Alternative is BCP56 & BCP5616
DCP56/-16
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP53)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
100
80
5
1
3 E
C 4
2 C
2,4
1
1 B
TOP VIEW
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Units
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25ºC (Note 3)
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @T
A
= 25°C (Note 3)
Symbol
P
d
T
j
, T
STG
R
θ
JA
Value
1
-55 to 150
125
Unit
W
°C
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
100
80
5.0
25
40
25
100
V
CE(SAT)
V
BE (ON)
Typ
160
Max
0.1
20
10
250
250
0.5
1.0
V
V
Unit
V
V
V
μA
μA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0,T
A
= 150°C
V
EB
= 5.0V, I
C
= 0
I
C
= 5.0mA, V
CE
= 2.0V
I
C
= 150mA, V
CE
= 2.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 150mA, V
CE
= 2.0V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 2.0V
I
C
= 50mA, V
CE
= 5.0V,
f = 100MHz
DC Current Gain
DCP56-16
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
Notes:
h
FE
f
T
200
MHz
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Pulse Test: Pulse width
=
≤300μs,
Duty Cycle
2%.
DCP56/-16
Document number: DS30796 Rev. 7 - 3
1 of 4
www.diodes.com
June 2011
© Diodes Incorporated

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