DCX100NS
100mA DUAL PRE-BIASED TRANSISTORS
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General Descriptions
•
DCX100NS is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point
of load. It features a discrete PNP pass transistor which
can support continuous maximum current up to 100 mA. It
also contains an NPN transistor which can be used as a
control switch and can also be biased using higher
supply. The component devices can be used as part of a
circuit or as stand alone discrete devices.
Features
•
•
•
•
•
Built in Biasing Resistors
Epitaxial Planar Die Construction
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Ideally Suited for Automated Assembly Processes
SOT-563
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-563
Case Material: Molded Plastic. "Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0035 grams (approximate)
Schematic and Pin Configuration
Reference
Q1
Q2
Device Type
PNP
NPN
R1 (NOM)
1KΩ
⎯
R2 (NOM)
10KΩ
⎯
R3, R4 (NOM)
⎯
10KΩ
Maximum Ratings: Total Device
Characteristic
Power Dissipation
Collector Current (using PNP as Pass Transistor)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Junction Temperature Range
@T
A
= 25°C unless otherwise specified
(Note 3)
(Note 3)
Symbol
P
D
I
C(max)
R
θ
JA
T
J
, T
STG
Value
150
100
833
-55 to +150
Unit
mW
mA
°C/W
°C
Sub-Component Device - Pre-Biased PNP Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Notes:
@T
A
= 25°C unless otherwise specified
Value
-50
+5 to -10
-100
Unit
V
V
mA
Symbol
V
cc
V
in
I
c
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30761 Rev. 6 - 2
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DCX100NS
© Diodes Incorporated
Sub-Component Device - Pre-Biased NPN Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
cc
V
in
I
O
@T
A
= 25°C unless otherwise specified
Value
50
-10 to +40
50
Unit
V
V
mA
Electrical Characteristics: Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
Δ
R1
R2/R1
f
T
Min
-0.3
⎯
⎯
⎯
⎯
33
-30
0.8
⎯
Typ
⎯
⎯
0.1
⎯
⎯
⎯
⎯
1
250
@T
A
= 25°C unless otherwise specified
Max
⎯
-3.0
-0.3
-7.2
-0.5
⎯
+30
1.2
⎯
Unit
V
V
V
mA
uA
⎯
%
%
MHz
Test Condition
V
CC
= -5V, I
O
= -100uA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
I
= -10mA /-0.5mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
⎯
⎯
V
CE
= -10V, I
E
= -5mA,
f = 100 MHz
Electrical Characteristics: Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistor Ratio Tolerance
Gain-Bandwidth Product
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
ΔR1
R2/R1
f
T
Min
0.5
⎯
⎯
⎯
⎯
30
-30
0.8
⎯
Typ
1.18
1.85
0.1
⎯
⎯
⎯
⎯
1
250
@T
A
= 25°C unless otherwise specified
Max
⎯
3
0.3
0.88
0.5
⎯
+30
1.2
⎯
Unit
V
V
V
mA
uA
⎯
%
⎯
MHz
Test Condition
V
CC
= 5V, I
O
= 100uA
V
O
= 0.3V, I
O
= 10mA
I
O
/I
I
= 10mA / 0.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
⎯
⎯
V
CE
= 10V, I
E
= 5mA,
f = 100 MHz
Typical Characteristics
250
@T
A
= 25°C unless otherwise specified
P
D
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Derating Curve (Total Device)
DS30761 Rev. 6 - 2
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DCX100NS
© Diodes Incorporated
Characteristics Curves of PNP Transistor (Q1)
0.2
0.18
I
C
, COLLECTOR CURRENT (A)
0.16
h
FE
, DC CURRENT GAIN
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
100
I
c
/I
b
=10
@T
A
= 25°C unless otherwise specified
300
V
CE
= 5V
T
A
= 150
°
C
250
T
A
= 125
°
C
200
T
A
= 85
°
C
150
100
50
0
0
0
0.1
100
1,000
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
100
I
c
/I
b
=20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
1
T
A
= 150
°
C
1
T
A
=150°C
T
A
=125°C
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
0.1
T
A
= 125
°
C
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 85
°
C
0.1
0.01
0.1
1,000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
10
100
1,000
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
15
V
CE
= 0.3V
2
1.8
1.6
1.4
12
INPUT VOLTAGE (V)
9
1.2
1
6
0.8
0.6
3
T
A
= -55°C
0.4
0.2
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0
0.1
0
0.1
1
100
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Input Voltage vs. Collector Current
DS30761 Rev. 6 - 2
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DCX100NS
© Diodes Incorporated
15
8
7
12
6
4
6
3
2
3
0
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Characteristics Curves of NPN Transistor (Q2)
0.1
0.09
I
C
, COLLECTOR CURRENT (A)
@T
A
= 25°C unless otherwise specified
300
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
250
200
150
100
50
0.4
0.8
1.2
1.6
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage
100
I
c
/I
b
=20
0
0
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical DC Current Gain vs. Collector Current
100
0
0.1
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
10
1
T
A
= 150
°
C
1
T
A
= 125
°
C
0.1
T
A
= 85
°
C
T
A
= 25
°
C
0.1
0.01
0.1
1
10
100
1,000
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 13 Typical Collector-Emitter Saturation Voltage
Fig. 12 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
vs. Collector Current
DS30761 Rev. 6 - 2
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DCX100NS
© Diodes Incorporated
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0.01
0.1
T
A
= -55
°
C
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
25
25
V
CE
= 5V
20
INPUT VOLTAGE (V)
20
15
15
T
A
= 150
°
C
T
A
= 125
°
C
10
10
T
A
= 85
°
C
5
5
T
A
= -55
°
C
T
A
= 25
°
C
0
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 14 Typical Input voltage vs. Output Current
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 15 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0
0.1
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
30
I
c
/I
b
=10
30
I
c
/I
b
= 20
24
24
18
T
A
= -55
°
C
18
12
T
A
= 25
°
C
12
6
T
A
= 85
°
C
T
A
= 125
°
C
6
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 150
°
C
T
A
= 125
°
C
0
0.1
T
A
= 150
°
C
100
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 16 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
T
A
= 85
°
C
100
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 17 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Ordering Information
(Note 4)
Device
DCX100NS-7
Notes:
Packaging
SOT-563
Shipping
3000/Tape & Reel
4. For packaging details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
C01 = Product Type Marking Code
YM = Date Code Marking
Y = Year e.g., T = 2006
M = Month e.g., 9 = September
C01 YM
Date Code Key
Year
Code
Month
Code
DS30761 Rev. 6 - 2
2005
S
Jan
1
Feb
2
2006
T
Mar
3
2007
U
Apr
4
May
5
2008
V
Jun
6
2009
W
Jul
7
Aug
8
2010
X
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
DCX100NS
© Diodes Incorporated
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