This product complies with the RoHS Directive (EU 2002/95/EC).
DSK5J01
Silicon N-channel Junction FET
For low frequency amplification
For pyroelectric sensor
Features
High gate-drain voltage (source open) V
GDO
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini3-F2-B
Name
Pin
1: Source
2: Drain
3: Gate
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Gate-drain breakdown voltage
Drain current
Gate current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Rating
–55
30
10
150
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Marking Symbol: B6
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Gate-drain breakdown voltage
Drain-source cutoff current
*
Gate-source cutoff current
Gate-source cutoff voltage
Forward transfer admittance
Short-circuit input capacitance (Common source)
Reverse transfer capacitance (Common source)
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
Y
fs
C
iss
C
rss
Conditions
I
G
= –100
mA,
V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
GS
= –30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 10
mA
V
DS
= 10 V, I
D
= 5 mA, f = 1 MHz
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
2.5
7.5
6.0
2.5
Min
–55
1.0
12.0
–10
–5
Typ
Max
Unit
V
mA
nA
V
mS
pF
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
I
DSS
Marking Symbol
P
P
1.0 to 3.0
B6P
Q
Q
2.0 to 6.5
B6Q
R
R
5.0 to 12.0
B6R
Publication date: November 2010
Ver. AED
1
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