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Datasheet> All Categories > semiconductor> Discrete semiconductor> DZT3150
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DZT3150

Description
5000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size263KB，4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DZT3150 Overview

5000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DZT3150 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityNPN
Maximum collector current5 A
Maximum Collector-Emitter Voltage25 V
Processing package descriptionGREEN, PLASTIC PACKAGE-4
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency150 MHz

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DZT3150
NPN SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
Mechanical Data
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
SOT-223
COLLECTOR
2,4
BASE 1
3
EMITTER
3 E
C 4
2 C
1 B
TOP VIEW
•
•
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
R
θJA
T
j
, T
STG
Value
50
25
7.0
5.0
1.0
1 (Note 3)
2 (Note 4)
125 (Note 3)
62.5 (Note 4)
-55 to +150
Unit
V
V
V
A
A
W
°C/W
°C
Characteristic
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
25
⎯
⎯
⎯
⎯
250
150
50
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
1.0
1.0
0.35
0.50
1.10
1.40
500
⎯
⎯
⎯
50
Unit
V
μA
μA
V
V
V
V
⎯
Test Condition
I
C
= 10mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 7.0V, I
C
= 0
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
I
C
= 500mA, V
CE
= 2.0V
I
C
= 2.0A,
V
CE
= 2.0V
I
C
= 5.0A,
V
CE
= 2.0V
I
C
= 50mA, V
CE
= 6.0V,
f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Note:
1.
2.
3.
4.
5.
f
T
C
obo
150
⎯
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 3.
Device mounted on Polyimide PCB with a copper area of 1.8cm
2.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%
DS30785 Rev. 4 - 2
1 of 4
www.diodes.com
DZT3150
© Diodes Incorporated

DZT3150 Related Products

DZT3150 DZT3150_1
Description 5000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 4 4
Transistor polarity NPN NPN
Maximum collector current 5 A 5 A
Maximum Collector-Emitter Voltage 25 V 25 V
Processing package description GREEN, PLASTIC PACKAGE-4 GREEN, PLASTIC PACKAGE-4
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 50 50
Rated crossover frequency 150 MHz 150 MHz

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