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DCX55

Description
NPN SURFACE MOUNT TRANSISTOR
File Size179KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DCX55 Overview

NPN SURFACE MOUNT TRANSISTOR

DCX55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCX52)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
COLLECTOR
2,4
1
BASE
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
3 E
C 4
2 C
1 B
TOP VIEW
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(ON)
DCX55, DCX55-16
h
FE
Min
60
60
5
63
40
63
100
Typ
200
Max
100
20
100
0.5
1.0
250
250
15
Unit
V
V
V
nA
μA
nA
V
V
MHz
pF
Test Conditions
I
C
= 100μA, I
E
= 0A
I
C
= 10mA, I
B
= 0A
I
E
= 10μA, I
C
= 0A
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 150°C
V
EB
= 5V, I
C
= 0A
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 2V
I
C
= 5mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 50mA, V
CE
= 5V,
f = 100MHz
V
CB
= 10V, f = 1MHz
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
1.
2.
3.
4.
DCX55
DCX55-16
f
T
C
obo
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS31154 Rev. 3 - 2
1 of 4
www.diodes.com
DCX55/-16
© Diodes Incorporated
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