DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
•
Low On-Resistance
•
70mΩ @V
GS
= 4.5V
•
100mΩ @V
GS
= 2.5V
•
170mΩ @V
GS
= 1.5V
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
NEW PRODUCT
•
•
•
•
•
•
SOT-23
D
Gate
ESD PROTECTED TO 3kV
TOP VIEW
Gate
Protection
Diode
Source
G
TOP VIEW
S
Equivalent Circuit
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±12
2.3
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
20
⎯
⎯
0.45
⎯
⎯
⎯
⎯
⎯
⎯
Typ
28
⎯
⎯
⎯
50
70
125
6
0.7
217
62
34
Max
⎯
1
±10
1.0
70
100
170
⎯
0.9
⎯
⎯
⎯
Unit
V
μA
μA
V
mΩ
S
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2.3A
V
GS
= 1.5V, I
D
= 0.5A
V
DS
=5V, I
D
= 2.4A
V
GS
= 0V, I
S
= 1.05A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb
2
O
3
Fire Retardants.
DMN2170U
Document number: DS31182 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2170U
10
8
6
NEW PRODUCT
4
2
0
0.5
1,000
f = 1MHz
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
C, TOTAL CAPACITANCE (pF)
0.4
V
GS
= 1.5V
0.3
C
iss
100
0.2
C
oss
C
rss
0.1
V
GS
= 2.5V
V
GS
= 4.5V
0
0
1
2
3
4
5
6
I
D
, DRAIN-SOURCE CURRENT
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
7
10
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
20
1
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.8
0.8
I
D
= 250µA
R
DS(ON)
STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 2.5V
I
D
= 2.3A
1.4
0.6
V
GS
= 4.5V
I
D
= 3A
1.2
V
GS
= 1.5V
I
D
= 0.5A
0.4
1.0
0.2
0.8
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Ambient Temperature
0
-50
0.6
-55
25
85
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMN2170U
Document number: DS31182 Rev. 4 - 2
2 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2170U
NEW PRODUCT
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
0.3
Ordering Information
Part Number
DMN2170U-7
Notes:
(Note 7)
Case
SOT-23
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
21N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
21N
Date Code Key (If Applicable)
Year
2007
Code
U
Month
Code
Jan
1
Feb
2
Mar
3
2008
V
Apr
4
May
5
YM
2009
W
Jun
6
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
Package Outline Dimensions
A
TOP VIEW
B C
G
H
K
M
J
D
F
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
DMN2170U
Document number: DS31182 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2170U
Suggested Pad Layout
Y
Z
G
C
Dimensions Value (in mm)
Z
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
NEW PRODUCT
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2170U
Document number: DS31182 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Sensor
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