DXT2222A
40V NPN SURFACE MOUNT TRANSISTOR IN SOT89
Features
BV
CEO
> 40V
I
C
= 600mA High Collector Current
Complementary PNP Type: DXT2907A
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
DXT2222A-13
DXT2222ATC
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
K1P
K1P
Reel size (inches)
13
13
Tape Width (mm)
12
12
Quantity per Reel
2,500
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
(Top View)
= Manufacturer’s Code Marking
K1P = Product Type Marking Code:
YWW = Date Code Marking
Y = Last Digit of Year ex: 5 = 2015
WW = Week Code 01 to 53
YWW
K1P
DXT2222A
Document number: DS31156 Rev. 5 - 2
1 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DXT2222A
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
75
40
6
800
600
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
P
D
R
JA
T
J
, T
STG
Value
0.75
1.2
166
104
-55 to +150
Unit
W
°
C/W
°
C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB;
device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXT2222A
Document number: DS31156 Rev. 5 - 2
2 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DXT2222A
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
I
BL
Min
75
40
6.0
35
50
75
100
40
35
50
0.6
300
Max
10
10
10
20
300
0.3
1.0
1.2
2.0
8
25
4.0
10
25
225
60
Unit
V
V
V
nA
A
nA
nA
nA
Test Conditions
I
C
= 10µA
I
C
= 10mA
I
E
= 10µA
V
CB
= 60V
V
CB
= 60V, T
A
= +150°
C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V
V
CE
= 60V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°
C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz
V
EB
= 0.5V, f = 1.0MHz
V
CE
= 20V, I
C
= 20mA, f = 100MHz
V
CE
= 10V, I
C
= 150µA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 30V, I
C
= 150mA,
V
EB(OFF)
= 0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
8.
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
f
T
NF
t
d
t
r
t
s
t
f
V
V
pF
pF
MHz
dB
ns
ns
ns
ns
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
2%.
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
0.8
0.7
500
V
CE
= 10V
I
B
= 10mA
I
C
, COLLECTOR CURRENT (A)
400
h
FE
, DC CURRENT G AIN
T
A
= 150°
C
0.6
I
B
= 8mA
0.5
0.4
0.3
I
B
= 6mA
I
B
= 4mA
300
T
A
= 85°
C
T
A
= 25°
C
200
I
B
= 2mA
0.2
I
B
= 1mA
0.1
0.0
0
1
2
3
4
5
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current
vs. Collector Emitter Voltage
100
T
A
= -55°
C
0
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 2 Typical DC Current Gain vs. Collector Current
1
DXT2222A
Document number: DS31156 Rev. 5 - 2
3 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DXT2222A
V
BE(ON )
, BASE EMITTER TURN-ON VOLTAGE (V)
0.6
I
C
/I
B
= 10
T
A
= 150°
C
1.2
V
CE
= 5V
V
CE(SAT)
, COLLECTOR EMITTER
SATURATI ON VOLTAGE (V)
1
0.4
0.8
T
A
= -55°
C
0.6
T
A
= 25°
C
0.2
T
A
= 85°
C
0.4
T
A
= 85°
C
0.2
T
A
= 150°
C
T
A
= 25°
C
0
0.01
T
A
= -55°
C
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1,000
0
0.1
V
BE(SAT)
, BASE EMITTER SATURATION VOLTAGE (V)
Figure 3 Typical Collector Emitter Saturation Voltage
vs. Collector Current
1.2
I
C
/I
B
= 10
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical Base Emitter Turn-On Voltage
vs. Collector Current
30
25
f = 1MHz
1
T
A
= -55°
C
0.6
T
A
= 25°
C
CAPACITANCE (pF)
0.8
20
15
C
ibo
0.4
T
A
= 85°
C
10
0.2
T
A
= 150°
C
5
C
obo
0
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Base Emitter Saturation Voltage
vs. Collector Current
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Capacitance Characteristics
500
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
450
400
350
300
250
200
150
100
50
0
0
V
CE
= 20V
f = 100MHz
20
40
60
80
I
C
, COLLECTOR CURRENT (mA)
Figure 7 Typical Gain-Bandwidth Product
vs. Collector Current
100
DXT2222A
Document number: DS31156 Rev. 5 - 2
4 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DXT2222A
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT89
D1
0
.20
R0
c
E
H
B1
B
e
L
D2
8°
(4
X)
H1
A
L1
D
z
E2
SOT89
Dim Min Max
Typ
A
1.40 1.60
1.50
B
0.50 0.62
0.56
B1
0.42 0.54
0.48
c
0.35 0.43
0.38
D
4.40 4.60
4.50
D1
1.62 1.83 1.733
D2
1.61 1.81
1.71
E
2.40 2.60
2.50
E2
2.05 2.35
2.20
e
-
-
1.50
H
3.95 4.25
4.10
H1
2.63 2.93
2.78
L
0.90 1.20
1.05
L1
0.327
z
0.20
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT89
X2
Dimensions
Y1
Y4
X
Y3
G
Y
Y2
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
X1
C
DXT2222A
Document number: DS31156 Rev. 5 - 2
5 of 6
www.diodes.com
November 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
