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DXT3150

Description
5 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size161KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DXT3150 Overview

5 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DXT3150 Parametric

Parameter NameAttribute value
Maximum collector current0.0050 A
Maximum Collector-Emitter Voltage25 V
Number of terminals4
Processing package descriptionGREEEN, PLASTIC, SOT89-3L, 4 PIN
each_compliYes
EU RoHS regulationsYes
stateActive
Shell connectionCOLLECTOR
structureSINGLE
Minimum DC amplification factor250
jesd_30_codeR-PDSO-F4
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeNPN
wer_dissipation_max__abs_1 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingMATTE TIN
Terminal formFLAT
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency220 MHz
DXT3150
NPN SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
25
7
5
Unit
V
V
V
A
3 E
C 4
2 C
1 B
COLLECTOR
2,4
1
BASE
TOP VIEW
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
25
250
150
50
Typ
Max
1.0
1.0
0.35
0.50
1.10
1.40
550
50
Unit
V
μA
μA
V
V
Test Conditions
I
C
= 10mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 7.0V, I
C
= 0
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
I
C
= 500mA, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
I
C
= 5.0A, V
CE
= 2.0V
I
C
= 50mA, V
CE
= 6.0V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
f
T
C
obo
220
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS31157 Rev. 3 - 2
1 of 3
www.diodes.com
DXT3150
© Diodes Incorporated
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