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DXTA42

Description
NPN SURFACE MOUNT TRANSISTOR
File Size144KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DXTA42 Overview

NPN SURFACE MOUNT TRANSISTOR

DXTA42
NPN SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DXTA92)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 54.8mg (approximate)
COLLECTOR
2,4
3 E
C 4
2 C
1 B
TOP VIEW
Top View
Device Schematic
1
BASE
3
EMITTER
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
300
300
6
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
1.
2.
3.
4.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
300
300
6
25
40
40
50
Typ
Max
0.1
0.1
0.5
0.9
Unit
V
V
V
μA
μA
V
V
Test Conditions
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 200V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 20mA, I
B
= 2mA
I
C
= 20mA, I
B
= 2mA
I
C
= 1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 20V,
f = 100MHz
V
CB
= 20V, f = 1MHz
f
T
C
obo
3
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
2%.
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
www.diodes.com
December 2009
© Diodes Incorporated

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