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MA45262A-94

Description
C BAND, 0.97pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size150KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA45262A-94 Overview

C BAND, 0.97pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, CERAMIC PACKAGE-2

MA45262A-94 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CEMW-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio4.8
Nominal diode capacitance0.97 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandC BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation0.1 W
Certification statusNot Qualified
minimum quality factor2200
Maximum reverse current0.02 µA
Reverse test voltage48 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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