Preliminary
Data Sheet
2SA1646,2SA1646-Z
Silicon Power Transistor
Description
R07DS0048EJ0200
Rev.2.00
Jul 01, 2010
The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-
emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
Features
•
Fast switching speed
•
Low collector-to-emitter saturation voltage:
⎯
V
CE(sat)
=
−0.3
V MAX. @I
C
=
−6
A
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
Conditions
Ratings
−150
−100
−7.0
−10
−20
−6.0
40
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PW
≤
300
μ
s, duty cycle
≤
10%
Tc = 25°C
Ta = 25°C
Package Drawing (Unit: mm)
?
?
?
?
Electrode Connection
?
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 1 of 4
2SA1646,2SA1646-Z
Chapter Title
Electrical Characteristics (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
*
1
h
FE2
*
1
h
FE3
*
1
V
CE(sat)1
*
1
V
CE(sat)2
*
1
V
BE(sat)1
*
1
V
BE(sat)2*1
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
=
−100
V, I
E
= 0 A
V
EB
=
−5
V, I
C
= 0 A
V
CE
=
−2
V, I
C
=
−0.5
A
V
CE
=
−2
V, I
C
=
−2
A
V
CE
=
−2
V, I
C
=
−6
A
I
C
=
−6
A, I
B
=
−0.3
A
I
C
=
−8
A, I
B
=
−0.4
A
I
C
=
−6
A, I
B
=
−0.3
A
I
C
=
−8
A, I
B
=
−0.4
A
V
CE
=
−10
V, I
C
=
−0.5
A
V
CB
=
−10
V, I
E
= 0 A, f = 1 MHz
I
C
=
−6
A, I
B1
=
−I
B2
=
−0.3
A,
R
L
= 8.3
Ω,
V
CC
=
−50
V
Refer to the test circuit.
MIN.
TYP.
MAX.
−10
−10
100
100
60
400
−0.3
−0.5
−1.2
−1.5
150
250
0.3
1.5
0.4
Unit
μ
A
μ
A
−
−
−
V
V
V
V
MHz
pF
μ
s
μ
s
μ
s
Note: *1.Pulse
test PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
Classification
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
Switching Time Test Circuit
Base current
waveform
Collector current
waveform
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 2 of 4
2SA1646,2SA1646-Z
Chapter Title
Typical Characteristics (Ta = 25°C)
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
I
C
Derating dT (%)
Case Temperature T
C
(°C)
Collector Current I
C
(A)
Single pulse
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Pulse test
DC Current Gain h
FE
Collector Saturation Voltage V
CE(sat)
(V)
Pulse test
Collector Current I
C
(A)
Collector Current I
C
(A)
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 3 of 4
2SA1646,2SA1646-Z
Chapter Title
Base Saturation Voltage V
BE(sat)
(V)
Pulse test
Collector Current I
C
(A)
Gain Bandwidth Product f
T
(MHz)
Collector Current I
C
(A)
Collector Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
Fall Time t
f
(
μ
s)
StorageTime t
stg
(
μ
s)
Turn-On Time t
on
(
μ
s)
Collector Current I
C
(A)
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 4 of 4
Revision History
2SA1646,2SA1646-Z Data Sheet
Description
Rev.
1.00
2.00
Date
Apr 12, 2002
Jul 01, 2010
Page
-
p.1
Summary
First Edition issued (D16120EJ1V0DS00)
Deletion of the description “Mold package that does not require an insulating
board or insulation bushing” in Features.
Deletion of Quality Grades.
Change of the format to Renesas Electronics Corporation's new format.
Throughout
All trademarks and registered trademarks are the property of their respective owners.
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