DJT4030P
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Ideally Suited for Automated Assembly Processes
Complementary NPN Type Available (DJT4031N)
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
•
•
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
NEW PRODUCT
COLLECTOR
2,4
3 E
C 4
2 C
1 B
Pin Out Configuration
1
BASE
3
EMITTER
Top View
Device Schematic
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Value
-40
-40
-6
-5
-3
-1
Unit
V
V
V
A
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
1.2
104
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
DJT4030P
Document number: DS31590 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-40
-40
-6
⎯
⎯
⎯
220
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150
35
150
53
12
41
180
146
34
Max
⎯
⎯
⎯
-100
-50
-100
⎯
400
⎯
-150
-200
-500
167
-1.0
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
Test Conditions
I
C
= -100μA
I
C
= -10mA
I
E
= -50μA
V
CB
= -40V, I
E
= 0
V
CB
= -40V, I
E
= 0, T
A
= 150°C
V
EB
= -6V, I
C
= 0
V
CE
= -1V, I
C
= -0.5A
V
CE
= -1V, I
C
= -1A
V
CE
= -1V, I
C
= -3A
I
C
= -0.5A, I
B
= -5mA
I
C
= -1A, I
B
= -10mA
I
C
= -3A, I
B
= -0.3A
I
E
= -3A, I
B
= -0.3A
I
C
= -1A, I
B
= -0.1A
V
CE
= -2V, I
C
= -1A
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
V
CB
= -10V, f = 1MHz
V
CB
= -5V, f = 1MHz
V
CC
= -10V, I
C
= -2A,
I
B1
= -200mA
V
CC
= -10V, I
C
= -2A,
I
B1
= I
B2
= -200mA
NEW PRODUCT
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
obo
C
ibo
t
on
t
d
t
r
t
off
t
s
t
f
mV
mΩ
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2.0
10
P
D
, POWER DISSIPATION (W)
1.6
I
C
, COLLECTOR CURRENT (A)
Pw = 1ms
1
DC
Pw = 100ms
Pw = 10ms
1.2
(Note 4)
0.8
(Note 3)
0.1
0.4
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.01
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DJT4030P
Document number: DS31590 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
800
V
CE
= -1V
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
600
T
A
= 150°C
T
A
= 85°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
NEW PRODUCT
400
T
A
= 25°C
0.01
T
A
= 25°C
T
A
= -55°C
200
T
A
= -55°C
0
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.0
V
CE
= -2V
0.001
1
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
I
C
/I
B
= 10
0.8
0.8
T
A
= -55°C
0.6
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0.2
T
A
= 150°C
0
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.1
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
f = 1MHz
CAPACITANCE (pF)
100
C
ibo
C
obo
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DJT4030P
Document number: DS31590 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
NEW PRODUCT
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 92°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 8 Transient Thermal Response (Note 3)
100
1,000
10,000
Ordering Information
Part Number
DJT4030P-13
Notes:
(Note 6)
Case
SOT-223
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
ZPS34
ZPS34 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
DJT4030P
Document number: DS31590 Rev. 2 - 2
4 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
Suggested Pad Layout
X1
Y1
NEW PRODUCT
C1
Y2
C2
X2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DJT4030P
Document number: DS31590 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated
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