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DL4934

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size415KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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DL4934 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

DL4933 THRU DL4937
Reverse Voltage - 50 to 600 Volts
SURFACE MOUNT FAST RECOVERY RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
Ideal for surface mounted applications
Low leakage current
Glass passivated junction
LL- 41 (MELF)
MECHANICAL DATA
Case :
Molded plastic
EPOXY : UL 94V-0
rate flame retardant
Teminals :
Solder plated solderable per
MIL-STD-202E, Method 208 guaranteed
Mounting Position: Any
Weight : 0.12 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
DL
4933
DL
4934
DL
4935
DL
4936
DL
4937
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
1.0
30.0
1.2
5.0
50.0
200
15.0
50.0
-65 to +150
400
280
400
600
420
600
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.24
(6.0mm)lead length,P.C.B. mounted

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DL4934 DL4933 DL4935 DL4937 DL4936
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