DMS2220LFW
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
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Features
•
Low On-Resistance
•
95mΩ @V
GS
= -4.5V
•
120mΩ @V
GS
= -2.5V
•
86mΩ (typ) @V
GS
= -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low V
F
Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
Case: DFN3020-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.011 grams (approximate)
NEW PRODUCT
•
•
•
•
•
•
•
•
DFN3020-8
A
A
S
G
Top View
Bottom View
Top View
Internal Schematic
K
K
D
D
K
K
K
D
D
D
A
A
S
G
Bottom View
Pin Configuration
Maximum Ratings – TOTAL DEVICE
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1.5
85
-55 to +150
Unit
W
°C/W
°C
Maximum Ratings – P-CHANNEL MOSFET – Q1
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Maximum Ratings – SBR – D1
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
Value
35
25
1
3
Unit
V
V
A
A
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
1 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFW
Electrical Characteristics – P-CHANNEL MOSFET – Q1
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
-20
⎯
⎯
⎯
-0.45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
@T
A
= 25°C unless otherwise specified
Typ
⎯
⎯
⎯
⎯
⎯
60
74
86
8
0.7
632
65
54
Max
⎯
-1
±100
±800
-1.3
95
120
⎯
⎯
-1.2
⎯
⎯
⎯
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
V
DS
= -5V, I
D
= -2.8A
V
GS
= 0V, I
S
= -1.6A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
NEW PRODUCT
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Electrical Characteristics – SBR – D1
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Notes:
@ T
A
= 25ºC unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
Min
35
⎯
⎯
Typ
40
⎯
⎯
⎯
⎯
Max
⎯
0.42
0.49
100
Unit
V
V
μA
Test Condition
I
R
= 1mA
I
F
= 0.5A
I
F
= 1.0A
V
R
= 20V
5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
10
V
GS
= -8.0V
V
GS
= -4.5V
10
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
V
GS
= -2.0V
6
-I
D
, DRAIN CURRENT (A)
8
V
GS
= -2.5V
8
6
4
V
GS
= -1.5V
4
T
A
= 150°C
2
V
GS
= -1.0V
V
GS
= -1.2V
2
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0.5
1
1.5
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
2 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFW
Q1, P-CHANNEL MOSFET - Continued
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
7
-I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
8
0.14
0.12
0.1
T
A
= 125°C
T
A
= 150°C
NEW PRODUCT
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
0.08
0.06
0.04
0.02
0
0
2
3
4
5
6
7
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1
8
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.11
1.4
V
GS
= -2.5V
I
D
= -2A
0.09
V
GS
= -2.5V
I
D
= -2A
1.2
V
GS
= -4.5V
I
D
= -5A
0.07
V
GS
= -4.5V
I
D
= -5A
1.0
0.8
0.05
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0.03
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
10,000
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
f = 1MHz
1
0.9
0.8
0.7
0.6
0.5
I
D
= -250µA
I
D
= -1mA
C, CAPACITANCE (pF)
1,000
C
iss
100
C
oss
C
rss
0.4
0.3
0.2
-50
10
0
8
12
16
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
4
20
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
3 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFW
Q1, P-CHANNEL MOSFET - Continued
10
NEW PRODUCT
-I
S
, SOURCE CURRENT (A)
8
6
T
A
= 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
D1, SBR
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.7
0.6
P
D
, POWER DISSIPATION (W)
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 10 Forward Power Dissipation
1
T
A
= 150°C
0.1
T
A
= 125°C
0.01
T
A
= 85°C
T
A
= 25°C
0.001
T
A
= -55°C
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 11 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
4 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFW
D1, SBR - Continued
10,000
I
R
, INSTANTANEOUS REVERSE CURRENT(uA)
1,000
T
A
= 150°C
T
A
= 125°C
10,000
1,000
C, CAPACITANCE (pF)
f = 1MHz
100
T
A
= 85°C
NEW PRODUCT
10
100
1
T
A
= 25°C
10
0.1
0.01
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 12 Typical Reverse Characteristics
1
0.1
1
10
100
V
R
, DC REVERSE VOLTAGE (V)
Fig. 13 Total Capacitance vs. Reverse Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
Note 2
150
T
A
, DERATED AMBIENT TEMPERATURE (°C)
125
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
75
50
25
0
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 14 Forward Current Derating Curve
175
0
10
20
30
V
R
, DC REVERSE VOLTAGE (V)
Fig. 15 Operating Temperature Derating
40
Ordering Information
Part Number
DMS2220LFW-7
Notes:
(Note 6)
Case
DFN3020-8
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ME YM
Date Code Key
Year
Code
Month
Code
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2011
Y
May
5
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
5 of 6
www.diodes.com
March 2009
© Diodes Incorporated
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